Vertical semiconductor device with tunnel insulator in current path controlled by gate electrode

A semiconductor device comprising:

• a semiconductor substrate;
• a source and drain region formed in said semiconductor substrate;
• a first gate insulating film formed between said source and drain region on said semiconductor substrate;
• a metal region arranged on said first gate insulating film functioning as a first gate electrode for said source and drain region;
• a semiconductor region as a channel path for a carrier arranged over said metal region;
• an insulating film which is thin to enable said carrier to tunnel form said metal region to said semiconductor region, said insulating film is interposed between said semiconductor region and said metal region;
• a conductive region arranged on said semiconductor region, contacting to said semiconductor region;
• a second gate insulating film arranged on a side surface of said semiconductor region elongating over said metal region, semiconductor region and conductive region;
• and
• a second gate electrode arranged on said gate insulating film,
• wherein said second gate electrode is perpendicular to a surface of said insulating film.

A semiconductor device comprising:

• a metal region functioned as source or drain;
• a semiconductor region located to contact to said metal region with a thin insulating film intervened between said metal region and said semiconductor region, wherein said semiconductor region functions as a channel path for a carrier and said thin insulating film is thin enough to enable said carrier to tunnel form said metal region to said semiconductor region;
• a conductive region functioned as a source or drain which is located to contact to said semiconductor region;
• a gate insulating film located in a same direction of said channel path, along a side surface of said metal region, said semiconductor region and said conductive region;
• and
• a gate electrode located to cover said gate insulating film,
• wherein said gate electrode at least located over said conductive region, said channel region and said metal region.