Semiconductor device and method of fabricating the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorYasuhiko Takemura
Life of this patent
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Abstract
Two kinds of TFTs are fabricated by the same process with a high production yield to manufacture an active-matrix circuit and a peripheral driver circuit on the same substrate. The active-matrix circuit is required to have a high mobility and a high ON/OFF current ratio. The peripheral driver circuit needs a complex interconnection structure. The active-matrix circuit and the peripheral driver circuit comprising the TFTs are fabricated monolithically. In this step, the gate electrodes of the TFTs of the active-matrix circuit is coated with an anodic oxide on their top and side surfaces. The gate electrodes of the TFTs of the peripheral driver circuit is coated with the anodic oxide on only their top surfaces; substantially no anodic oxide is present on the side surfaces.
Claims38
A method of manufacturing a display device comprising:
- forming a semiconductor film over a substrate;
- crystallizing the semiconductor film by a heat treatment;
- etching the crystallized semiconductor film into semiconductor layers;
- forming a gate insulating film on the semiconductor layers by decomposing TEOS;
- doping a first impurity element into the semiconductor layers;
- forming a mask over a portion of the semiconductor layers;
- and
- doping a second impurity element into at least one of the semiconductor layers over which the mask is not formed.
A method of manufacturing a display device comprising:
- forming a semiconductor film over a substrate;
- crystallizing the semiconductor film by a heat treatment;
- etching the crystallized semiconductor film into semiconductor layers;
- forming a gate insulating film on the semiconductor layers by decomposing TEOS;
- and
- performing a rapid thermal annealing to the semiconductor layers after forming the gate insulating film.
A method of manufacturing a display device comprising:
- forming a semiconductor film over a substrate;
- crystallizing the semiconductor film by a heat treatment;
- etching the crystallized semiconductor film into semiconductor layers;
- forming a gate insulating film on the semiconductor layers by decomposing TEOS;
- and irradiating the semiconductor layers with a laser light after forming the gate insulating film.
A method of manufacturing a display device comprising:
- forming a semiconductor film over a substrate;
- irradiating the semiconductor film with a laser light to crystallize the semiconductor film;
- etching the crystallized semiconductor film into semiconductor layers;
- forming a gate insulating film on the semiconductor layers by decomposing TEOS;
- doping a first impurity element into the semiconductor layers;
- forming a mask over a portion of the semiconductor layers;
- and
- doping a second impurity element into at least one of the semiconductor layers over which the mask is not formed.
A method of manufacturing a display device comprising:
- forming a semiconductor film over a substrate;
- irradiating the semiconductor film with a laser light to crystallize the semiconductor film;
- etching the crystallized semiconductor film into semiconductor layers;
- forming a gate insulating film on the semiconductor layers by decomposing TEOS;
- and
- performing a rapid thermal annealing to the semiconductor layers after forming the gate insulating film.
A method of manufacturing a display device comprising:
- forming a semiconductor film over a substrate;
- irradiating the semiconductor film with a laser light to crystallize the semiconductor film;
- etching the crystallized semiconductor film into semiconductor layers;
- forming a gate insulating film on the semiconductor layers by decomposing TEOS;
- and
- irradiating the semiconductor layers with a laser light after forming the gate insulating film.
Dependencies are inferred from the claim text.