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AssigneeE. I. Du Pont de Nemours and Company
InventorsRobert Clayton Wheland, Roger Harquail French, Frank Leonard Schadt, III, Frederick C. Zumsteg, Jr.
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Fluoroolefin/acid group or protected acid group-containing copolymers for photoresist compositions and microlithography methods employing the photoresist compositions are described. These copolymer compositions comprise 1) at least one fluoroolefin, preferably hexafluoroisobutylene, and 2) an acid group or a protected acid group (e.g., a t-alkyl ester, preferably a t-butyl ester), which together impart high ultraviolet (UV) transparency and developability in basic media to these materials. The materials of this invention have high UV transparency, particularly at short wavelengths, e.g., 157 nm and 193 nm, which makes them useful for lithography at these short wavelengths.
A photoresist comprising a copolymer comprising:
The photoresist of claim 1 further comprising a solvent selected from the group consisting of cyclohexanone, 2-heptanone, and HCF2CF2OCH2CH2OCF2CF2H.
A process for preparing a photoresist image on a substrate comprising, in order:
Dependencies are inferred from the claim text.