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US 6,872,320 B2Granted
Method for printing etch masks using phase-change materials
AssigneeXerox Corporation
InventorsWilliam S. Wong, Robert A. Street, Stephen D. White, Robert Matusiak, Raj B. Apte
Life of this patent
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Abstract
A method and system for masking a surface to be etched is described. A droplet source ejects droplets of a masking material for deposit on a thin-film or other substrate surface to be etched. The temperature of the thin-film or substrate surface is controlled such that the droplets rapidly freeze upon contact with the thin-film or substrate surface. The thin-film or substrate is then etched. After etching the masking material is removed.
Claims30
A method of masking comprising the operations of:
- while maintaining a surface to be etched below the freezing temperature of a phase change material, ejecting in liquid form droplets of the phase change masking material in a pattern on the surface to be etched, the droplets changing from a liquid to a solid after contact with the surface to form a first mask;
- etching the surface to remove material from around said first mask to create a first etched surface;
- and
- removing the first mask from said first etched surface.
1 more element
A method of masking comprising the operations of:
- maintaining a surface to be etched below the freezing temperature of a phase-change masking material;
- ejecting in liquid form droplets of the phase change masking material in a pattern on the surface to be etched, the droplets changing from a liquid to a solid after contact with the surface to form a first mask, wherein the surface to be etched is maintained at approximately room temperature, and the phase change material is heated prior to the operation of ejecting in liquid form;
- etching the surface to remove material from around said first mask to create a first etched surface;
- and
- removing the first mask from said first etched surface.
2 more elements
A method of masking comprising the operations of:
- maintaining a surface to be etched below the freezing temperature of a chase-change masking material;
- ejecting in liquid form droplets of the phase change masking material in a pattern on the surface to be etched, the droplets changing from a liquid to a solid after contact with the surface to form a first mask;
- etching the surface to remove material from around said first mask to create a first etched surface;
- and
- removing the first mask from said first etched surface;
- depositing a second layer to be etched over the etched surface;
- maintaining the second layer to be etched below the freezing temperature of a second phase-change masking material;
- ejecting in liquid form a second plurality of droplets of the second phase change masking material in a second pattern on the second layer to be etched, the second plurality of droplets changing from a liquid to a solid after contact with the second layer to form a second mask;
- etching the second layer to remove material from around said second mask to create a second etched surface;
- and
- removing the second mask from said second etched surface.
8 more elements
A method of patterning a thin film comprising the operations of:
- depositing a thin film;
- depositing droplets of a phase change masking material with a freezing point between 50 and 100 degrees centigrade in a pattern on the thin film;
- etching the thin film to remove portions not protected by the droplets of the phase change masking material;
- and
- removing the droplets of the phase change masking material from the thin film.
2 more elements
A method of performing a masking process comprising the operations of:
- depositing a coating of photosensitive material on a substrate to be patterned;
- maintaining the coating of photosensitive material at a temperature below the freezing point of a phase-change material;
- depositing droplets of phase-change material on the photosensitive material in a pattern;
- exposing the photosensitive material not protected by the phase change material to ultraviolet light;
- removing the phase change material;
- and,
- removing the photosensitive material on the substrate not exposed to the ultraviolet light.
4 more elements
A method of masking comprising the operations of:
- maintaining a temperature of a surface to be etched above the boiling point of a liquid carrier, said liquid carrier including a suspended masking material;
- ejecting in liquid form droplets of a solution including the liquid carrier and suspended masking material in a pattern on the surface to be etched, the liquid carrier rapidly evaporating after contact with the surface leaving the masking material to form a first mask;
- etching the surface to remove material from around said mask to create a first etched surface;
- and
- removing the mask from said first etched surface.
2 more elements
Dependencies are inferred from the claim text.