Surge protection semiconductor device
AssigneeShindengen Electric Manufacturing Co., Ltd.
InventorRitsuo Oka
Life of this patent
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Abstract
A pnpn thyristor element Thy1 and six pn diode elements D1, D2, D3, D4, D5, and D6 are formed in a semiconductor substrate of a first conductivity type, and separated into six regions by a diffusion layer of a second conductivity type which also functions as the anode of the thyristor element Thy1. A double isolation diffusion layer is disposed between the region of the thyristor element Thy1 and three pn diode elements D1 ·D2 and D6, and the region of the three remaining pn diodes D3, D4, and D5. Surface connection is performed to provide a balance type surge protection circuit.
Claims7
A surge protection semiconductor device comprising:
- a semiconductor substrate of a first conductivity type having first and second surfaces;
- a thyristor element, provided in a first semiconductor region of a second conductivity type formed in the semiconductor substrate so as to extend from the first surface to the second surface, having an anode electrode and cathode electrode;
- a substrate region of the first conductivity type, the substrate region being adjacent to one side of the first semiconductor region and being comprised of the semiconductor substrate;
- first and second diode elements provided in a second semiconductor region of the first conductivity type, the second semiconductor region being adjacent to the other side of the first semiconductor region and being comprised of the semiconductor substrate, each of the first and second diode elements having an anode electrode and a common cathode electrode;
- third, fourth and fifth diode elements each being provided in third, fourth and fifth semiconductor regions, respectively, the third, fourth and fifth semiconductor regions being comprised of the semiconductor substrate and being isolated from each other by one of isolation regions of the second conductivity type, one of the isolation regions being adjacent to the substrate region, and each of the third, fourth and fifth diode elements having an anode electrode and cathode electrode formed on the first surface;
- and
- a sixth diode element provided in a sixth semiconductor region of the first conductivity type adjacent to the second semiconductor region and isolated by one of the isolation regions, the sixth semiconductor region being comprised of the semiconductor substrate, the sixth diode element having an anode electrode and cathode electrode.
Dependencies are inferred from the claim text.