US 6,869,638 B2 · Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same

Abstract

A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, or wherein M is Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, or Al; N is nitrogen; each of R1 and R2 is same or different and is independently selected from H, aryl, perfluoroaryl, C1-C8 alkyl, C1-C8 perfluoroalkyl, alkylsilyl; and x is the oxidation state on metal M; and an aminosilane compound of the formula HxSiAy(NR1R2)4-x-y or wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 0 to 3; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1-C8 alkyl, and C1-C8 perfluoroalkyl; and n is from 1-6. By comparison with the standard SiO2 gate dielectric materials, these gate dielectric materials provide low levels of carbon and halide impurity.

Claims46

Dependent claims

A CVD precursor composition for forming a thin film dielectric on a substrate, such precursor composition including a vapor source reagent-mixture including a metalloamide source reagent compound selected from the group consisting of:

M(NR1R2)x;
and
wherein M is selected from the group consisting of Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al;
N is nitrogen;
each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1-C8 alkyl, C1-C8 perfluoroalkyl, alkylsilyl;
and x is the oxidation state on metal M;
and it is from 1-6;
and
an aminosilane source reagent compound selected from the group consisting of:
HxSiAy(NR1R2)4-x-y;
and
wherein H is hydrogen;
x is from 0 to 3;
Si is silicon;
A is a halogen;
Y is from 0 to 3;
N is nitrogen;
each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1-C8 alkyl, and C1-C8 perfluoroalkyl;
and n is from 1-6;
x is from 0 to 3;
Si is silicon;
A is a halogen;
Y is from 0 to 3;
N is nitrogen;
n is from 1-6.

22 more elements

Dependencies are inferred from the claim text.

Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same

Life of this patent

Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same

Life of this patent

Abstract

Claims46