Method for electrochemically processing a workpiece
AssigneeNutool, Inc.
InventorsBulent M. Basol, Homayoun Talieh, Cyprian E. Uzoh
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Abstract
The present invention relates to a process for forming a near-planar or planar layer of a conducting material, such as copper, on a surface of a workpiece using an ECMPR technique. The process preferably uses at least two separate plating solution chemistries to form a near-planar or planar copper layer on a semiconductor substrate that has features or cavities on its surface.
Claims32
An electrochemical processing method for operating upon a wafer, the wafer having a tap surface with first and second cavities disposed thereon, the first cavity having a narrower width than a second cavity, and a conductive layer having a conductive top surface associated therewith disposed on the top surface of the wafer and on the first and second cavities, the method comprising:
- performing electrochemical deposition on the conductive layer of the wafer using a first electrolyte solution having a first conductive material therein to result in at least the first cavity being at least partially filled with the first conductive material;
- and
- performing electrochemical mechanical deposition on the conductive layer of the wafer in which the first cavity is at least partially filled with the first conductive material using a second electrolyte solution that is different from the first electrolyte solution and that has a second conductive material therein to result in at least some of any remaining cavity of the first and second cavities being further filled with the second conductive material, wherein physical contact and relative motion is maintained between the conductive top surface of the conductive layer disposed over the top surface of the wafer and a workpiece surface influencing device for at least a period of the electrochemical mechanical deposition.
Dependencies are inferred from the claim text.