Wavelength tunable VCSEL
AssigneeSamsung Electronics Co., Ltd.
InventorTaek Kim
Life of this patent
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Abstract
A wavelength tunable VCSEL is provided. The wavelength tunable VCSEL includes a current constricting layer which is formed on a lower distributed Bragg reflector, upper and lower electrodes for laser oscillation, and additional electrodes which are formed on a predetermined region of an upper distributed Bragg reflector from which light is emitted so as to vary a width of an effective resonance region. Compared to an existing VCSEL, the wavelength tunable VCSEL can rapidly change a wavelength of emitted light and prevent the deterioration of gain characteristics of laser oscillation due to variations in the width of the effective resonance region according to variations in a temperature. As a result, a wavelength tunable region of emitted laser can be increased.
Claims4
A wavelength tunable VCSEL comprising:
- a substrate;
- a first electrode which is formed underneath the substrate;
- a lower distributed Bragg reflector which is formed on the substrate;
- a current constricting layer which is formed on the lower distributed Bragg reflector;
- a cavity resonator layer which is formed on the current constricting layer;
- an upper distributed Bragg reflector which is formed on a predetermined region of the cavity resonator layer;
- a second electrode which is formed on the cavity resonator layer around the upper distributed Bragg reflector and used along with the first electrode for laser oscillation;
- and
- third electrode which is formed on the upper distributed Bragg reflector and used along with the second electrode for changing a width of an effective resonance region.
Dependencies are inferred from the claim text.