S system for the formation of a silicon thin film and a semiconductor-insulating film interface
AssigneesNEC Corporation, Sumitomo Heavy Industries, Ltd., Anelva Corporation
InventorsHiroshi Tanabe, Tomoyuki Akashi, Yoshimi Watabe
Life of this patent
Estimating the term…
Abstract
In a semiconductor thin film forming system for modifying a predetermined region of a semiconductor thin film by exposing the semiconductor thin film to a projected light patterned through a pattern formed on a photo mask, the system includes a mechanism (opt20′) for uniformizing the light for exposure in a predetermined area on the photo mask. This system can provide a crystallized silicon film having a trap state density less than 1012 cm−2 and can provide a silicon-insulating film interface exhibiting a low interface state density.
Claims11
A semiconductor thin film forming method comprising:
- modifying a predetermined region of a semiconductor thin film by exposing the semiconductor thin film to a projected light obtained after a light is patterned through plural patterns formed on a photo mask, said projected light having a beam size in a minor axis direction in the order of micrometers;
- and
- uniformizing the light to be applied in such a manner that the intensity of the light in a predetermined area on the photo mask distributes within a range of ±11.2% of the average intensity of the light in said area,
- wherein spatial distribution of peak intensity of light projected and applied on the semiconductor thin film is uniformized to an identical extent with the peak intensity of the intensity distribution on the photo mask.
A semiconductor thin film forming method comprising:
- modifying a predetermined region of a semiconductor thin film by exposing the semiconductor thin film to a projected light obtained after a light is patterned through plural patterns formed on a photo mask, said projected light having a beam size in a minor axis direction in the order of micrometers,
- wherein the light is applied in such a manner that the intensity of the light in a predetermined area on the photo mask is distributed within a range of ±11.2% of an average intensity of the light in said area.
Dependencies are inferred from the claim text.