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US 6,861,332 B2Granted
Air gap interconnect method
AssigneeIntel Corporation
InventorsHyun-Mog Park, Grant M. Kloster
Life of this patent
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Abstract
A low-k dielectric sacrificial material is formed within a microelectronic structure covered with a layer defining an exhaust vent. At an appropriate time, the underlying sacrificial material is decomposed and exhausted away through the exhaust vent. Residue from the exhausted sacrificial material accumulates at the vent location during exhaustion until the vent is substantially occluded. As a result, an air gap is created having desirable characteristics as a dielectric.
Claims12
A method of forming a microelectronic structure comprising:
- thermally decomposing a portion of a sacrificial dielectric layer to form a gas phase dielectric decomposition,
- wherein the sacrificial dielectric layer is positioned between a substrate layer and a second dielectric layer, the second dielectric layer defining an exhaust vent for transporting gas across the second dielectric layer;
- introducing a carrier plasma to the gas phase dielectric decompositon to form a volatile gas;
- cooling the environment around the volatile gas and allowing the volatile gas to escape through the exhaust vent to deposit residue at least partially occluding the exhaust vent;
- and
- forming a void in the region previously occupied by the sacrificial dielectric layer.
3 more elements
Dependencies are inferred from the claim text.