Nitride semiconductor light-emitting device and optical device including the same

A nitride semiconductor light-emitting device comprising an emission layer having a multiple quantum well structure obtained by alternately stacking a plurality of quantum well layers and a plurality of barrier layers,

• said quantum well layers being formed with GaN1-x−y−zAsxPySbz (0≦x≦0.10, 0≦y≦0.16, 0≦z≦0.04, x+y+z>0) and containing Al,
• said barrier layers being formed with a nitride semiconductor.

A method of manufacturing a nitride semiconductor light-emitting device by growing an emission layer including a quantum well layer of GaN1-x−y−zAsxPySbz(0<x+y+z≦0.3) containing Al and a p-type layer thereon over a substrate, thereafter cooling the substrate to a temperature in a range 650° C. to 900° C. with supply of atmosphere gas containing nitrogen and NH3, and then stopping supply of NH3 with the substrate being held at a temperature within said range.

A method of manufacturing a nitride semiconductor light-emitting device including an emission layer including a quantum well layer of GaN1-x−y−zAsxPySbz (0≦x≦0.10, 0≦y≦z≦0.04, 0<x+y+z) containing Al and a barrier layer of a nitride semiconductor over a substrate, characterized in that a growth interruption period in a range of 1 second to 180 seconds is provided between crystal growth of said well layer and crystal growth of said barrier layer.