Surface light emitting type semiconductor laser having a vertical cavity

A semiconductor laser assembly comprising:

• a stem;
• a light receiving element mounted on one surface of said stem;
• a surface light emitting type laser chip with a vertical cavity mounted on a surface of said light receiving element, said laser chip comprising a substrate, a semiconductor laminated portion which has a lower multilayer reflection film, a light emitting layer forming portion and an upper multilayer reflection film sequentially formed directly on said substrate, a current injection region being defined by a current blocking region formed in a part of said semiconductor laminated portion, said semiconductor laminated portion having an outlet so as to emit a light from a surface of said current injection region, and said outlet being offset from a center of said substrate on which said semiconductor laminated portion is formed;
• and
• a cap having a light transmission window formed of a transparent body in a center thereof and attached to said stem so as to cover said laser chip and said light receiving element,
• wherein said outlet is positioned so as to be under a center of said light transmission window.