Offset compensated sensing for magnetic random access memory

A magnetic random access memory device comprising:

• a resistive memory element and a voltage supply including a transistor having a gate, said gate adapted to control an electrical current through said transistor in relation to a voltage applied at said gate, said transistor further having a transistor source operatively connected to said resistive memory device;
• a differential amplifier portion including a first input operatively connected to a source of a reference voltage, a second input, a first output switchingly connected to said gate, and a second complementary output;
• a compensation amplifier portion including a third input adapted to receive a first compensation voltage, a fourth input adapted to receive and store a second compensation voltage, a third output operatively connected to said first output, and a fourth complementary output operatively connected to said second output;
• and
• a feedback line adapted to switchingly connect said second input to said transistor source.