System and method to avoid voltage read errors in open digit line array dynamic random access memories

A memory device, comprising:

• a first memory array formed in a first region of a substrate, the first memory array having memory cells;
• a second memory array formed in a second region of the substrate, the second memory array having memory cells;
• a plurality of sense amplifiers, each coupled to a respective first digit line coupled to memory cells of the first memory array and further coupled to a respective second digit line couples to memory cells of the second memory array;
• a switch coupled to the first region of the substrate and further coupled to the second region of the substrate to electrically couple the regions of the substrate of the respective memory arrays;
• the switch adapted to decouple the first and second regions of the substrate in response to an inactive balance signal;
• and
• a control circuit coupled to the switch and adapted to generate an inactive balance signal when accessing a memory cell of the first or second memory array.

A memory device, comprising:

• a first plurality of memory cell arrays, the first plurality having at least one cell plate for the memory cell arrays;
• a second plurality of memory cell arrays, the second plurality having at least one cell plate for the memory cell arrays;
• the memory cell arrays of the first plurality located adjacent the memory cell arrays of the second plurality;
• a plurality of sets of sense amplifiers, each set of sense amplifiers having sense amplifiers coupled to respective pairs of digit lines, a first digit line of each pair coupled to memory cells of a memory cell array in the first plurality of memory cell arrays and a second memory cell arrays;
• a switch coupled to the cell plate of the plurality of memory cell arrays and further coupled to the cell plate of the second plurality of memory cell arrays to electrically coupled together the cell plates of the first and second pluralities in response to an active switch signal and decouple the cell plates of the first and second pluralities in response to an inactive switch signal;
• and
• a control circuit coupled to the switch and adapted to generate an active switch signal prior to initiation of a memory access operation to memory cells of the first plurality of memory cell arrays or memory cells of the second plurality of memory cell arrays and generate an inactive switch signal in response to the initiation of a memory access operation.

A method for accessing dynamic random access memory cells, comprising:

• biasing cell plates of adjacent memory cell arrays to a reference voltage level;
• coupled the cell plates of the adjacent memory cell arrays prior to initiation of a memory access operation to a memory cell in either of the adjacent memory cell arrays;
• decoupling the cell plates of the adjacent memory cell arrays in response to initiation of the memory access operation to a memory cell in either of the adjacent memory cell arrays;
• and
• sensing a voltage differential between the accessed memory cell and the cell plate of the memory cell array in which the accessed memory cell is not located.

A method for accessing dynamic random access memory, comprising:

• electrically coupling together cell plates of first and second memory cell arrays;
• decoupling the cell plates of the first and second memory cell arrays;
• activating a row of memory cells in the first memory cell array;
• and
• for at least one memory cell of the activated row, comparing a voltage resulting from activation of the row memory cells and a reference voltage of the second memory cell array.