Capacitor having copper electrodes and diffusion barrier layers

A capacitor formed on a substrate, having an upper electrode, and a lower electrode interposed between the upper electrode and the substrate, with a dielectric between the upper and lower electrodes, at least the, upper electrode being made of copper, wherein

• the lower electrode is formed in a first recess that passes through a first insulating layer of an interlayer insulating film, wherein top surfaces of the lower electrode and the first insulating layer are formed along a first plane,
• the upper electrode and the dielectric are formed in a second recess which passes through a second insulating layer of the interlayer insulating film,
• a barrier is provided in the second recess to prevent diffusion of copper into the dielectric,
• the lower electrode does not extend into the second recess, and
• the dielectric extends out of the second recess on a top surface of the second insulating layer, and wherein a top surface of the dielectric on the second insulating layer and a top surface of the upper electrode are coplanar.