Delta Vgs curvature correction for bandgap reference voltage generation
AssigneeStandard Microsystems Corporation
InventorThomas A. Somerville
Life of this patent
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Abstract
A bandgap voltage reference generator may include a BJT (Bipolar Junction Transistor) and a pair of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) coupled to the BJT. The base-emitter voltage Vbe of the BJT may exhibit a non-linearity with respect to temperature. The difference between gate-source voltages of the pair of MOSFETs exhibits an opposite non-linearity with respect to temperature. The opposite non-linearity reduces the effect of the non-linearity on the output voltage of the bandgap voltage reference generator. The difference in gate-source voltages of the pair of MOSFETs may be determined by the ratio of channel width to channel length of each MOSFET included in the pair of MOSFETs.
Claims15
A bandgap voltage reference generator, comprising:
- a BJT (Bipolar Junction Transistor), wherein a base-emitter voltage Vbe of the BJT exhibits a non-linearity with respect to temperature;
- and
- a pair of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) coupled to the BJT, wherein a difference between gate-source voltages of the pair of MOSFETs exhibits an opposite non-linearity with respect to temperature;
- wherein the opposite non-linearity reduces an effect of the non-linearity on an output voltage of the bandgap voltage reference generator.
A method for operating a bandgap voltage reference generator, comprising:
- powering the bandgap voltage reference generator, wherein the bandgap voltage reference generator comprises a BJT (Bipolar Junction Transistor) and a pair of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) coupled to the BJT, wherein in response to said powering:
- a base-emitter voltage Vbe of the BJT exhibits a non-linearity with respect to temperature;
- and
- a difference between gate-source voltages of the pair of MOSFETs exhibits an opposite non-linearity with respect to temperature;
- and
- the bandgap voltage reference generator generating a reference voltage in response to said powering, wherein the opposite non-linearity reduces an effect of the non-linearity on the reference voltage.
A method, comprising:
- a base-emitter voltage Vbe of a BJT (Bipolar Junction Transistor) exhibiting a non-linearity with respect to temperature;
- and
- a difference between gate-source voltages of a pair of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) coupled to the BJT exhibiting an opposite non-linearity with respect to temperature;
- the opposite non-linearity reducing an effect of the non-linearity on an output voltage of a bandgap voltage reference generator, wherein the bandgap voltage reference generator includes the BJT and the pair of MOSFETs.
Dependencies are inferred from the claim text.