Maximum VCC calculation method for hot carrier qualification
AssigneeAdvanced Micro Devices, Inc.
InventorsHyeon-Seag Kim, Amit P. Marathe, Nian Yang, Tien-Chun Yang
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Abstract
A method of generating an operating condition projection corresponding to a predetermined lifetime for semiconductor devices is disclosed. The disclosed method includes collecting lifetime information from a plurality of semiconductor devices at more than one stress condition by inducing a predetermined drain-source voltage for each stress condition. The method also includes determining the median lifetime for semiconductor devices at each of the stress conditions. Further, the method includes calculating a lifetime at each stress condition at which a predetermined percentage of the devices will exceed and extrapolating the lifetime for devices used at operating conditions.
Claims9
A method of generating a lifetime projection for semiconductor devices, comprising:
- collecting device lifetime information for a plurality of semiconductor devices at more than one stress condition, the stress condition being based on an induced drain-source voltage stress condition;
- calculating, for each stress condition, a lifetime level at which a predetermined percentage of devices will exceed, each lifetime level being a data point on the stress condition versus lifetime graph;
- calculating the slope of an interpolated line through the data points on the stress condition versus lifetime graph;
- and
- determining a line corresponding to a ratio of substrate current to gate current versus drain voltage relationship that satisfies the lifetime level, based on the interpolated line information.
Dependencies are inferred from the claim text.