Semiconductor device having aluminum alloy conductors
AssigneeRenesas Technology Corp.
InventorsTomio Iwasaki, Hideo Miura, Takashi Nakajima, Hiroyuki Ohta, Shinji Nishihara, Masashi Sahara
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Abstract
A semiconductor device is provided which includes a semiconductor substrate, metal conductors formed on a side of a main face of the substrate, which metal conductors contain aluminum as a main constituent thereof, and copper as an additive element, the metal conductors being made to contain such an element as to suppress the precipitation of copper or being made to have such a film adjacent to the metal conductor as to suppress the precipitation of copper or being made to have such a film adjacent to the metal conductor as to suppress the precipitation of copper.
Claims25
A semiconductor device comprising a semiconductor substrate, and aluminum conductors formed in a plurality of layers on a portion of a main face of the substrate which aluminum conductors comprise aluminum as a main constituent thereof, said aluminum conductors containing copper and nickel to suppress diffusion of said copper between said aluminum conductors,
- wherein said aluminum conductors each have at least one area in which conductor spacing between each said aluminum conductor and an adjacent aluminum conductor is not more than 0.4 μm,
- wherein the content of nickel contained in said aluminum conductors is not less than 0.02 at. % but not more than 1 at. %.
A semiconductor device comprising a semiconductor substrate, and a plurality of aluminum conductors formed adjacent to one another on a portion of a main face of the substrate which aluminum conductors comprise aluminum as a main constituent thereof, a film adjacent to said aluminum conductors which adjacent film comprises titanium or titanium nitride as a main constituent thereof, said aluminum conductors containing copper and nickel.
A semiconductor device comprising a semiconductor substrate, and aluminum conductors formed on a portion of a main face of the substrate which aluminum conductors comprise aluminum as a main constituent thereof, said aluminum conductors having at least one area in which conductor spacing is not more than 0.4 μm, a film adjacent to said aluminum conductors which adjacent film comprises one kind selected from the group consisting of ruthenium, platinum and iridium as main constituent thereof, said aluminum conductors containing copper, wherein said aluminum conductors contain nickel not less than 0.02 at. % but not more than 1 at. %.
A semiconductor device comprising a semiconductor substrate, and aluminum conductors formed on a portion of a main face of the substrate which aluminum conductors comprise aluminum as a main constituent thereof, said aluminum conductors containing copper and nickel, wherein each of the aluminum conductors has at least one area in which conductor spacing is not more than 0.4 μm and wherein the content of nickel contained in said aluminum conductors is not less than 0.2 at. % but not more than 1 at. %.
A semiconductor device comprising:
- a semiconductor substrate,
- a plurality of aluminum conductors formed adjacent to one another on a portion of a main face of the substrate which aluminum conductors comprise aluminum as a main constituent thereof, said aluminum conductors containing copper;
- means for suppressing diffusion of copper atoms in said aluminum conductors to prevent precipitation of the copper from one of said aluminum conductors to an adjacent one of said aluminum conductors;
- and
- an insulating film overlying said aluminum conductors on said portion of a main face of the substrate.
A semiconductor device comprising a semiconductor substrate, and a plurality of aluminum conductors formed adjacent to one another on a portion of a main face of the substrate which aluminum conductors comprise aluminum as a main constituent thereof, said aluminum conductors containing copper and also containing nickel in an amount sufficient to prevent precipitation of said copper between adjacent ones of said aluminum conductors.
A semiconductor device comprising a semiconductor substrate, and aluminum conductors formed in a plurality of avers on a portion of a main face of the substrate which aluminum conductors comprise aluminum as a main constituent thereof, said aluminum conductors containing copper and nickel to suppress diffusion of said copper between said aluminum conductors, further comprising an insulating film overlying said aluminum conductors on said portion of a main face of the substrate.
A semiconductor device comprising a semiconductor substrate, and aluminum conductors formed in a plurality of layers on a portion of a main face of the substrate which aluminum conductors comprise aluminum as a main constituent thereof, said aluminum conductors containing copper and nickel to suppress diffusion of said copper between said aluminum conductors, wherein an interconnect pattern of the aluminum conductors is formed by being etched, and the nickel in the aluminum conductors is of a sufficient amount to prevent a precipitation of the copper in the aluminum conductors so that precipitate containing copper is prevented from remaining during the etching to prevent a short in the interconnect pattern caused by the precipitate containing the copper.
A semiconductor device comprising:
- a semiconductor substrate,
- a plurality of aluminum conductors formed adjacent to one another on a portion of a main face of the substrate which aluminum conductors comprise aluminum as a main constituent thereof, said aluminum conductors containing copper;
- and
- means for suppressing diffusion of copper atoms in said aluminum conductors to prevent precipitation of the copper from one of said aluminum conductors to an adjacent one of said aluminum conductors,
- wherein an interconnect pattern of the aluminum conductors is formed by being etched, and the means for suppressing diffusion of copper atoms comprises nickel being provided in the aluminum conductors in a sufficient amount to prevent the precipitation of the copper in the aluminum conductors so that precipitate containing copper is prevented from remaining during the etching to prevent a short in the interconnect pattern caused by the precipitate containing the copper.
A semiconductor device comprising a semiconductor substrate, and aluminum conductors formed in a plurality of layers on a portion of a main face of the substrate which aluminum conductors comprise aluminum as a main constituent thereof, said aluminum conductors containing copper and nickel to suppress diffusion of said copper between said aluminum conductors, wherein one of the aluminum conductors is electrically connected to the semiconductor substrate through a plug.
A semiconductor device comprising a semiconductor substrate, and aluminum conductors formed in a plurality of layers on a portion of a main face of the substrate which aluminum conductors comprise aluminum as a main constituent thereof, said aluminum conductors containing copper and nickel to suppress diffusion of said copper between said aluminum conductors,
- wherein each of the aluminum conductors extends parallel to the main face of the substrate to electrically connect portions on the substrate to each other, which portions are separated from each other along the main face of the substrate.
Dependencies are inferred from the claim text.