Semiconductor integrated circuit device
AssigneeRenesas Technology Corp.
InventorsTsuyoshi Tamaru, Kazutoshi Oomori, Noriko Miura, Hideo Aoki, Takayuki Oshima
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Abstract
A semiconductor integrated circuit device has a semiconductor substrate, an interlayer insulating film including SiOF films formed on a main surface of the semiconductor substrate, a wiring groove formed by dry etching of the interlayer insulating film, and a Cu wiring buried in the wiring groove by a Damascene method, wherein a silicon oxynitride film is provided between a silicon nitride film serving as an etching stopper layer for the dry etching and the SiOF film, so that free F generated in the SiOF film is trapped with the silicon oxynitride film.
Claims9
A semiconductor integrated circuit device comprising:
- a first insulating film formed over a main surface of a semiconductor substrate and comprised of fluorine-containing silicon oxide;
- a second insulating film formed over said first insulating film and including silicon and oxide as a component;
- a third insulating film formed over said second insulating film and including silicon and carbon as a component;
- and
- a fourth insulating film formed over said third insulating film and comprised of fluorine-containing silicon oxide,
- wherein said fourth insulating film includes a first trench and wherein a first wiring is formed inside said first trench.
Dependencies are inferred from the claim text.