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US 6,856,018 B2Granted
Semiconductor device and method of manufacture thereof
AssigneeSony Corporation
InventorsYoshiyuki Enomoto, Ryuichi Kanamura
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Abstract
In order to form an aluminum system wiring that does not peel off on an insulating film containing fluorine and to improve the reliability thereof, a semiconductor device according to the present invention includes an insulating film (14) containing fluorine formed on a substrate (11), a titanium aluminum alloy film (17a) formed on the insulating film (14) containing fluorine, and a metallic film (17b) comprising aluminum or an aluminum alloy formed on the titanium aluminum alloy film (17a).
Claims1
A semiconductor device comprising:
- an insulating film containing fluorine formed on a substrate;
- a titanium aluminum alloy film formed on said insulating film containing fluorine;
- and
- a metallic film comprising aluminum or an aluminum alloy formed on said titanium aluminum alloy film,
- wherein,
- the insulating film containing fluorine is not fluorine-depleted.
3 more elements
Dependencies are inferred from the claim text.