Method and apparatus using nanotubes for cooling and grounding die
OwnerDamion T. Searls, Terrance J. Dishongh +1inventors
InventorsDamion T. Searls, Terrance J. Dishongh, James Daniel Jackson
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Abstract
An embodiment of the present invention described and shown in the specification and drawings is a process and a package for facilitating cooling and grounding of a semiconductor die using carbon nanotubes in a thermal interface layer between the die and a thermal management aid. The embodiments that are disclosed have the carbon nanotubes positioned and sized to utilize their high thermal and electrical conductance to facilitate the flow of heat and current to the thermal management aid. One embodiment disclosed has the carbon nanotubes mixed with a paste matrix before being applied. Another disclosed embodiment has the carbon nanotubes grown on the surface of the semiconductor die.
Claims23
An integrated circuit package, comprising a die;
- a thermal management aid mounted above the die;
- and
- an interface layer thermally coupling the die and the thermal management aid, the interface layer further comprising an array of carbon nanotubes aligned substantially perpendicular to the die and the thermal management aid and wherein the array of carbon nanotubes is encapsulated in a matrix of interstitial material.
An integrated circuit package, comprising a die;
- a thermal management aid mounted above the die;
- and
- an interface layer thermally coupling the die and the thermal management aid, the interface layer further comprising an array of carbon nanotubes wherein the thickness of the interface layer is less than about 0.01 mm to 0.10 mm.
An integrated circuit package, comprising a die;
- a thermal management aid mounted above the die;
- and
- an interface layer thermally coupling the die and the thermal management aid, the interface layer further comprising an array of carbon nanotubes wherein the array of carbon nanotubes is encapsulated in a matrix of interstitial material and wherein the length of a substantial portion of the nanotubes slightly exceeds the thickness of the interstitial material to allow a substantial portion of the nanotubes to be wedged between the die and the thermal management aid to conduct heat from the die primarily through the nanotubes rather than through the surrounding interstitial material.
An integrated circuit package, comprising a die;
- a thermal management aid mounted above the die;
- and
- an interface layer thermally coupling the die and the thermal management aid, the interface layer further comprising an array of carbon nanotubes wherein the array of carbon nanotubes is encapsulated in a matrix of interstitial material, wherein the thermal management aid is formed from a metal having a softness substantially less than the hardness of the nanotubes and wherein the interstitial material encapsulates a substantial portion of the length of at least a portion of the array of nanotubes with the exception of the extreme ends of at least some of the nanotubes which are constructed and arranged to extend from the surface of the interstitial material and which have a diameter to facilitate embedding the ends of the nanotubes in the surface of the thermal management aid.
An integrated circuit package, comprising a die;
- a thermal management aid mounted above the die;
- and
- an interface layer thermally coupling the die and the thermal management aid, the interface layer further comprising an array of carbon nanotubes wherein the array of carbon nanotubes is encapsulated in a matrix of interstitial material and wherein the interface layer is electrically conductive to couple a surface of the die to a source of reference potential carried by the thermal management aid.
A thermal interface layer for use as an intermediate in manufacturing a circuit package containing a die and a thermal management aid, the layer comprising:
- an array of carbon nanotubes oriented with longitudinal axes of a substantial percentage of the nanotubes having an orientation substantially perpendicular to the first and second surface thereof;
- and
- a matrix of interstitial material substantially encapsulating the nanotubes with the exception of the tips of the nanotubes projecting from at least one of the first and second surfaces thereof to be embedded into at least one of the thermal management aid and the die.
A process for coupling a die to a thermal management aid, comprising:
- forming an array of nanotubes on a surface of the die;
- and
- mounting the thermal management aid adjacent and in contact with the array of nanotubes to couple the die to the thermal management aid;
- and
- providing electrical connections from at least one active circuit on the die to the surface of the die and utilizing the interface layer to electrically connect the die through the thermal management aid to a source of reference potential.
A process for coupling a die to a thermal management aid, comprising:
- forming an array of nanotubes on a surface of the die wherein the die is milled to move the surface closer to at least one active circuit within the die;
- and
- mounting the thermal management aid adjacent and in contact with the array of nanotubes to couple the die to the thermal management aid.
A process for coupling a die to a thermal management aid, comprising:
- forming an array of nanotubes on a surface of the die forming the layer of nanotubes on a back surface of the die precedes fabrication of active devices on the front surface of the die;
- and
- mounting the thermal management aid adjacent and in contact with the array of nanotubes to couple the die to the thermal management aid.
A process for providing a thermal conduction path from circuit die to a thermal management aid, the process comprising:
- positioning the thermal management aid adjacent the die;
- and
- forming an array of nanotubes by a chemical vapor deposition process, the array positioned between the surface of the die and the thermal management aid with the layer of nanotubes providing a thermal conduction path between the die and the thermal management aid.
The process of 21, wherein forming the array of nanotubes comprises forming a plurality of bundles of nanotubes on the surface of the die.
Dependencies are inferred from the claim text.