Semiconductor device having a nitride-based hetero-structure and method of manufacturing the same
AssigneeChiba University
InventorsAkihiko Yoshikawa, Ke Xu
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Abstract
The object of the invention is to provide a semiconductor device having a nitride-based hetero-structure in which an epitaxial nitride film has a uniformly flat surface at a single molecule level, and a method of easily fabricating such a device. The object of the invention is achieved by providing a semiconductor device comprising a sapphire substrate whose c-surface is modified to be nitride-surfaced, GaN buffer layer, N polarity GaN layer, N polarity AlN layer, N polarity InN/InGaN multi-layered device structure, Al polarity AlN layer, and GaN cap layer.
Claims2
A semiconductor device having a nitride-based hetero-structure mainly composed of InN or an InN-based compound which comprises crystal having, at least partly, a nitrogen polarity surface or a surface equivalent to that surface.
A method of manufacturing a semiconductor device having a nitride-based hetero-structure mainly composed of InN or an InN-based compound comprising a step of forming, in the device, crystal having, at least partly, a nitrogen polarity surface or a surface equivalent to that surface.
Dependencies are inferred from the claim text.