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US 6,856,002 B2Granted
Graded GexSe100-x concentration in PCRAM
AssigneeMicron Technology, Inc.
InventorsJohn T. Moore, Terry L. Gilton, Kristy A. Campbell
Life of this patent
Estimating the term…
Abstract
The present invention provides a design for a PCRAM element which incorporates multiple metal-containing germanium-selenide glass layers of diverse stoichiometries. The present invention also provides a method of fabricating the disclosed PCRAM structure.
Claims25
A memory element comprising:
- a first metal-containing chalcogenide glass layer, said first metal-containing chalcogenide glass layer having a first stoichiometry;
- and
- a second metal-containing chalcogenide glass layer formed over said first metal-containing chalcogenide glass layer, said second metal-containing chalcogenide glass layer having a second stoichiometry different from said first stoichiometry.
A memory element comprising:
- a first electrode comprising tungsten;
- an insulating layer having an opening in communication with said first electrode;
- a first silver-containing germanium-selenide glass layer formed within said opening and in communication with said first electrode, wherein said first silver-containing germanium-selenide glass layer has a stoichiometric composition represented by the formula GexSe100−x and x has a value of about 40;
- a second silver-containing germanium-selenide glass layer formed within said opening and in communication with said first silver-containing germanium-selenide glass layer, wherein said second silver-containing germanium-selenide glass layer has a stoichiometric composition represented by the formula GexSe100−x and x has a value of about 25;
- and
- a second electrode comprising silver in communication with said second silver-containing germanium selenide glass layer.
3 more elements
A memory element comprising:
- a first electrode;
- an insulating layer having an opening in communication with said first electrode;
- a first metal-containing chalcogenide glass layer formed within said opening and in communication with said first electrode, wherein said first metal-containing chalcogenide glass layer has a first glass matrix structure;
- a second metal-containing chalcogenide glass layer formed within said opening and in communication with said first metal-containing chalcogenide glass layer, wherein said second metal-containing chalcogenide glass layer has a second glass matrix structure different from said first glass matrix structure;
- and
- at least one additional metal-containing chalcogenide glass layer formed within said opening, said at least one additional metal-containing chalcogenide glass layer having a glass matrix structure different from the glass matrix structure of any metal-containing chalcogenide glass layer adjacent to said at least one additional metal-containing chalcogenide glass layer;
- and
- a second electrode in communication with said at least one additional metal-containing chalcogenide glass layer.
5 more elements
A memory element comprising:
- a first electrode comprising tungsten;
- an insulating layer having an opening in communication with said first electrode;
- a first silver-containing germanium-selenide glass layer formed within said opening and in communication with said first electrode, wherein said first silver-containing germanium-selenide glass layer has a stoichiometric composition represented by the formula GexSe100−x and x has a value of about 40;
- and
- a second silver-containing germanium-selenide glass layer formed within said opening and in communication with said first silver-containing germanium-selenide glass layer, wherein said second silver-containing germanium-selenide glass layer has a stoichiometric composition represented by the formula GexSe100−x and x has a value of about 25;
- a third silver-containing germanium-selenide glass layer formed within said opening and in communication with a previously formed silver-containing germanium-selenide glass layer, wherein said third silver-containing germanium-selenide glass layer has a stoichiometric composition represented by the formula GexSe100−x and x has a value of about 40;
- and
- a second electrode comprising silver and in communication with said third silver-containing germanium-selenide glass layer.
5 more elements
Dependencies are inferred from the claim text.