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US 6,855,998 B2Granted
Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorYoshitaka Hokomoto
Life of this patent
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Abstract
A semiconductor device comprises a field effect transistor and a schottky-barrier diode mounted in the same semiconductor substrate, the semiconductor device having buried doped layers buried at a predetermined interval in a drift layer of a first conductivity type in a schottky-barrier diode region so as to have a predetermined depth, the buried doped layers having a second conductivity type.
Claims32
A semiconductor device comprising:
- a field effect transistor;
- a schottky-barrier diode mounted in a same semiconductor substrate as said field effect transistor;
- and
- buried doped layers spaced at a predetermined interval and buried at a predetermined depth in a drift layer of a first conductivity type in a schottky-barrier diode region, said buried doped layers having a second conductivity type.
1 more element
A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type;
- a semiconductor layer of the first conductivity type and forming a drift layer on said semiconductor substrate;
- a first base layer of a second conductivity type, which is formed in the vicinity of a surface in a field effect transistor region of said semiconductor layer;
- a source layer of the first conductivity type and formed on a surface of said first base layer;
- a gate insulating film formed on said source layer;
- a gate electrode formed on said gate insulating film;
- a first metal film formed as source and anode electrodes on said field effect transistor region and a schottky-barrier diode region, respectively;
- a second metal film formed as drain and cathode electrodes on the reverse of said semiconductor substrate;
- and
- buried doped layers of the second conductivity type spaced at a predetermined interval and buried at a predetermined depth in said semiconductor layer in said schottky-barrier diode region.
7 more elements
A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type;
- a semiconductor layer of the first conductivity type, which is a drift layer formed on said semiconductor substrate;
- a first base layer of a second conductivity type, which is formed in the vicinity of a surface in a field effect transistor region of said semiconductor layer;
- a source layer of the first conductivity type, which is formed on a surface portion of said first base layer;
- a plurality of trench gates each formed in a trench which is dug from the surface of said source layer to an upper layer portion of said semiconductor layer, said plurality of trench gates each comprising a gate insulating film formed on an inner surface of the trench and a gate electrode formed on said gate insulating film in the trench;
- a first metal film formed as source and anode electrodes on said field effect transistor region and a schottky-barrier diode region, respectively;
- a second metal film formed as drain and cathode electrodes on the reverse of said semiconductor substrate;
- and
- buried doped layers of the second conductivity type, which are buried at a predetermined interval in said semiconductor layer in said schottky-barrier diode region at a predetermined depth and which are buried at the same interval as said gate electrode in said semiconductor layer in said field effect transistor region so as to have such a depth that said buried doped layers contact bottom faces of said trench gates.
6 more elements
Dependencies are inferred from the claim text.