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US 6,855,997 B2Granted
Mask, exposure method, line width measuring method, and method for manufacturing semiconductor devices
AssigneeNikon Corporation
InventorKyoichi Suwa
Life of this patent
Estimating the term…
Abstract
A mask of the present invention has a circuit pattern to be transferred to a substrate via an optical system, and an inspection pattern to be used for a measurement of a line width of the pattern transferred to the substrate. By using such a mask, the time for proceeding from inspection to actual device exposure can be shortened.
Claims16
A mask comprising:
- a circuit pattern to be transferred to a substrate via an optical system;
- and
- an inspection pattern to be used for a measurement of a line width of a pattern transferred to said substrate,
- wherein said inspection pattern includes:
- a first measurement pattern;
- a second measurement pattern to be superimposed on an image of said first measurement pattern;
- and
- an extraction pattern to be superimposed on an image of said first measurement pattern and an image of said second measurement pattern, and to be used for an extraction of a predetermined image from a superimposed image of said first measurement pattern and said second measurement pattern.
5 more elements
A mask comprising:
- a base member;
- a first line-and-space pattern formed on said base member with a predetermined line width;
- and
- a second line-and-space pattern which is to be superimposed on an image of said first line-and-space pattern and which is formed at a predetermined angle with respect to said first line-and-space pattern with a line width different from said predetermined line width.
1 more element
A mask comprising:
- a base member;
- a first measurement pattern formed on said base member;
- a second measurement pattern formed on said base member and to be superimposed on an image of said first measurement pattern;
- and
- an extraction pattern formed on said base member and to be superimposed on an image of said first measurement pattern and an image of said second measurement pattern, and to be used for extraction of a predetermined image from a superimposed image of said first measurement pattern and said second measurement pattern.
2 more elements
Dependencies are inferred from the claim text.