Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same

A semiconductor structure comprising:

• a) a monocrystalline Group IV substrate;
• b) a layer of amorphous oxide of Group IV in contact with said substrate;
• c) a monocrystalline metal oxide and/or metal nitride layer overlying the amorphous layer;
• d) a metal or metal oxide capping layer in contact with said monocrystalline metal oxide and/or metal nitride layer;
• e) a compound semiconductor template layer in contact with said capping layer;
• and
• f) a monocrystalline compound semiconductor layer in contact with said template layer;
• a silicon transistor formed at least in part in the monocrystalline silicon substrate;
• a compound transistor formed at least in part in the monocrystalline compound semiconductor material;
• a switch to selectively couple the silicon transistor and the compound transistor in response to a control signal;
• and
• a control circuit configured to provide the control signal.

A semiconductor structure comprising:

• a) a monocrystalline Group IV substrate;
• b) a layer of amorphous oxide of Group IV in contact with said substrate;
• c) a monocrystalline metal oxide and/or metal nitride layer overlying the amorphous layer;
• d) a metal or metal oxide capping layer in contact with said monocrystalline metal oxide and/or metal nitride layer;
• e) a compound semiconductor template layer in contact with said capping layer;
• and
• f) a monocrystalline compound semiconductor layer in contact with said template layer;
• one or more silicon transistors formed at least in part in the monocrystalline silicon substrate;
• one or more compound transistors formed at least in part in the monocrystalline compound semiconductor material;
• and
• switches associated with respective transistors of the one or more silicon transistors and the one or more compound transistors, the switches receiving control signals for selectively coupling the respective transistors to one of the signal input circuit and the signal output circuit.

A semiconductor structure comprising:

• a) a monocrystalline Group IV substrate;
• b) a layer of amorphous oxide of Group IV in contact with said substrate;
• c) a monocrystalline metal oxide and/or metal nitride layer overlying the amorphous layer;
• d) a metal or metal oxide capping layer in contact with said monocrystalline metal oxide and/or metal nitride layer;
• e) a compound semiconductor template layer in contact with said capping layer;
• and
• f) a monocrystalline compound semiconductor layer in contact with said template layer;
• at least one configurable transistor formed at least in part in the monocrystalline compound semiconductor material;
• and
• a control circuit electrically coupled with the transistor and formed at least in part in a silicon portion of the semiconductor structure.