Back to results
US 6,855,991 B2Granted
Semiconductor device having a doped lattice matching layer and a method of manufacture therefor
AssigneeAgere Systems Inc.
InventorsWen Lin, Charles W. Pearce
Life of this patent
Estimating the term…
Abstract
The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the same. The semiconductor device may include a doped buried layer located over a doped substrate and a doped epitaxial layer located over the doped buried layer. The semiconductor device may further include a first doped lattice matching layer located between the substrate and the buried layer and a second doped lattice matching layer located between the doped buried layer and the doped epitaxial layer.
Claims9
A semiconductor device, comprising:
- a doped buried layer located over a doped substrate;
- a doped epitaxial layer located over the doped buried layer;
- a first doped lattice matching layer located between the doped substrate and the doped buried layer;
- and
- a second doped lattice matching layer located between the doped buried layer and the doped epitaxial layer;
- wherein dopant concentrations of the first and second doped lattice matching layers are each less than a dopant concentration of the doped buried layer.
3 more elements
A integrated circuit, comprising:
- doped buried layer located over a doped substrate;
- doped epitaxial layer located over the doped buried layer;
- first doped lattice matching layer located between the doped substrate and the doped buried layer;
- and
- second doped lattice matching layer located between the doped buried layer and the doped epitaxial layer,
- transistors located over the doped epitaxial layer;
- and
- interconnects located within interlevel dielectric layers located over the transistors, which connect the transistors to form an operational integrated circuit;
- wherein dopant concentrations of the first and second doped lattice matching layers are each less than a dopant concentration of the doped buried layer.
6 more elements
Dependencies are inferred from the claim text.