Semiconductor switching devices

A switching device in an integrated circuit comprising:

• a first supply voltage;
• a second supply voltage at a voltage level lower than said first supply voltage;
• a common input having a first voltage level, and a second voltage level lower than said first voltage level;
• a common output;
• a first device comprised of a conducting film, and a gate to modulate the conduction of said film, wherein said conducting film having a source region, a drain region, and a body region of opposite dopant to said source and drain regions formed between said source and drain regions;
• said first device source coupled to first supply voltage, drain coupled to common output and gate coupled to common input, and said body modulated between a non-conductive state and a conductive state by said first and second common input voltage levels;
• and
• a second device composed of a conducting film, and a gate to modulate the conduction of said film, wherein said conducting film having a source region, a drain region, and a body region of opposite dopant to said source and drain regions formed between said source and drain regions;
• said second device source coupled to second supply voltage, drain coupled to common output and gate coupled to common input, and said body modulated between a conductive state and a non-conductive state by said first and second common input voltage levels;
• wherein said conducting films of first and second devices comprises a single geometry of a very thin semiconductor material having a thickness tP1 in Angstroms;
• and
• wherein each of said body regions is designed to contain the entire surface inversion layer within said thickness tP1 during the conductive state by satisfying the condition:
• 1/(D*tP12)<X Angstroms;
• and
• wherein each of said body regions is designed to be fully depleted of majority carriers inside said thickness tP1 to eliminate a floating body region during the conductive state by satisfying the condition:
• 1/(D*tP12)>0.5*X/Ln(D/Ni) Angstroms;
• where, X is a thickness parameter in Angstroms defined by X=q2/(2*kT* εS), q is the electron charge, kT/q is the thermal voltage, εS is the permittivity of the conducting film semiconductor material, D is the doping in each of the body regions in Atoms/Angstroms3, and Ni is the intrinsic carrier concentration of the conducting film semiconductor material in Atoms/Angstroms3.