Back to results
US 6,855,987 B2Granted
Semiconductor device with high mobility and high speed
AssigneeFujitsu Limited
InventorsTakashi Mimura, Keiji Ikeda
Life of this patent
Estimating the term…
Abstract
The semiconductor device comprises a semiconductor layer 18 formed on an insulation layer 16, a gate electrode 22 formed on the semiconductor layer with a gate insulation film 20 formed therebetween, a source/drain region 24 formed on the semiconductor layer on both sides of the gate electrode, and a semiconductor region 14 buried in the insulation layer 16 in a region below the gate electrode.
Claims13
A semiconductor device comprising:
- a semiconductor layer formed on an insulation layer;
- a gate electrode formed on the semiconductor layer with a gate insulation film formed therebetween;
- a source/drain region formed in the semiconductor layer on both sides of the gate electrode;
- and
- a semiconductor region buried in the insulation layer in a region below the gate electrode, wherein
- the semiconductor layer is formed of Si1-XGeX where a composition ratio X is 0<X≦1, and
- the semiconductor region is formed of Si.
4 more elements
A semiconductor device comprising:
- a semiconductor layer formed on an insulation layer;
- a gate electrode formed on the semiconductor layer with a gate insulation film formed therebetween;
- a source/drain region formed in the semiconductor layer on both sides of the gate electrode;
- and
- a semiconductor region buried in the insulation layer in a region below the gate electrode, wherein
- the semiconductor layer is formed of Si1-XGeX where a composition ratio X is 0<X≦1, and
- the semiconductor region is formed of Si1-XGeX where a composition ratio X is 0<X≦1.
4 more elements
A semiconductor device comprising:
- a semiconductor layer formed on an insulation layer;
- a gate electrode formed on the semiconductor layer with a gate insulation film formed therebetween;
- a source/drain region formed in the semiconductor layer on both sides of the gate electrode;
- and
- a semiconductor region buried in the insulation layer in a region below the gate electrode, wherein
- the semiconductor layer is formed of Si, and
- the semiconductor region is formed of Si1-XGeX where a composition ratio X is 0<X≦1.
4 more elements
A semiconductor device comprising:
- a semiconductor layer formed on an insulation layer;
- a gate electrode formed on the semiconductor layer with a gate insulation film formed therebetween;
- a source/drain region formed in the semiconductor layer on both sides of the gate electrode;
- and
- a semiconductor region buried in the insulation layer in a region below the gate electrode, wherein
- semiconductor layer is formed of an n type semiconductor or a p type semiconductor, and
- the semiconductor region is formed of an intrinsic semiconductor.
4 more elements
A semiconductor device comprising:
- a semiconductor layer formed on an insulation layer;
- a gate electrode formed on the semiconductor layer with a gate insulation film formed therebetween;
- a source/drain region formed in the semiconductor layer on both sides of the gate electrode;
- and
- a semiconductor region buried in the insulation layer in a region below the gate electrode, wherein
- the semiconductor layer is formed of an intrinsic semiconductor, and
- the semiconductor region is formed of an intrinsic semiconductor.
4 more elements
A semiconductor device comprising:
- a semiconductor layer formed on an insulation layer;
- a gate electrode formed on the semiconductor layer with a gate insulation film formed therebetween;
- a source/drain region formed in the semiconductor layer on both sides of the gate electrode;
- and
- a semiconductor region buried in the insulation layer in a region below the gate electrode, wherein
- the source/drain region is formed of a metal or a metal silicide.
3 more elements
A semiconductor device comprising:
- a semiconductor layer formed on an insulation layer;
- a gate electrode formed on the semiconductor layer with a gate insulation film formed therebetween;
- a source/drain region formed in the semiconductor layer on both sides of the gate electrode;
- and
- a semiconductor region buried in the insulation layer in a region below the gate electrode, wherein
- the semiconductor layer and the semiconductor region are formed of Si, wherein
- the semiconductor layer and semiconductor region are formed of Si, wherein
- the source/drain region is formed of a metal or a metal silicide.
5 more elements
Dependencies are inferred from the claim text.