US 6,855,979 B2Granted

Multi-bit non-volatile memory device and method therefor

AssigneeFreescale Semiconductor, Inc.

InventorsMichael Sadd, Bruce E. White, Craig T. Swift

Life of this patent

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Abstract

A multi-bit non-volatile memory device includes a charge storage layer (14) sandwiched between two insulating layers (12 and 16) formed on a semiconductor substrate (10). A thick oxide layer (18) is formed over the charge storage layer (14) and a minimum feature sized hole is etched in the thick oxide layer (18). An opening is formed in the thick oxide layer (18). Side-wall spacers (60) formed on the inside wall of the hole over the charge storage layer have a void (62) between them that is less than the minimum feature size. The side-wall spacers (60) function to mask portions of the charge storage layer (14), when the charge storage layer is etched away, to form the two separate charge storage regions (55 and 57) under the side-wall spacers (60). The device can be manufactured using only one mask step. Separating the charge storage regions prevents lateral conduction of charge in the nitride.

Claims6

Dependent claims

A memory device comprising:

a substrate;
a gate located over the substrate;
a first charge storage structure located over an insulating layer on the substrate, at least a portion of the first charge structure located under a first portion of the gate,
a second charge storage structure located over the substrate, at least a portion of the second charge storage structure located under a second portion of the gate, the second charge storage structure is located apart from the first charge storage structure;
wherein the gate includes a third portion located between the first portion of the gate and the second portion of the gate;
a gate dielectric, a first portion of the gate dielectric located between the substrate and the first charge storage structure, a second portion of the gate dielectric located between the substrate and the second charge storage structure, a third portion of the gate dielectric located between the substrate and the third portion of the gate, wherein the third portion of the gate dielectric at a location where the gate is closest to the substrate, has a thickness that is different from a thickness of first portion of the gate dielectric and a thickness of the second portion of the gate dielectric.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 10/769,228Filed 30 Jan 2004 · division
Priority: 20 Mar 2003
Published: US 2004/0185621 A123 Sep 2004
Granted: 15 Feb 2005
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10D 64/035
Of data-storage electrodes: comprising conductor-insulator-conductor-insulator-semiconductor structures
B82Y 10/00
Nanotechnology for information processing, storage or transmission
H10D 30/0411
Of FETs having insulated gates [IGFET]: of FETs having floating gates
H10D 30/687
Floating-gate IGFETs: having more than two programming levels