Thin film diode integrated with chalcogenide memory cell

A memory device, comprising:

• a first chalcogenide glass element over a first diffusion barrier layer in a bottom portion of a via;
• a second chalcogenide glass element having n-type doping and overlying the first chalcogenide glass element;
• a third chalcogenide glass element containing silver and overlying the second chalcogenide glass element;
• a second diffusion barrier layer over the third chalcogenide glass element.

A PCRAM cell with an integrated diode, comprising:

• a first layer of chalcogenide glass with n-type doping over the first diffusion barrier layer;
• a second layer of chalcogenide glass infused with silver and in contact with the first layer of chalcogenide glass;
• and
• a top electrode layer over the second layer of chalcogenide glass, the top electrode layer comprising silver.

An integrated programmable memory cell comprising:

• a first polysilicon layer formed over a tungsten suicide layer and having a first conductivity type;
• a layer of germanium selenide glass containing metal ions over the first polysilicon layer;
• and
• a top electrode over the layer of germanium selenide glass.

A method of fabricating memory cells for a memory array in an integrated circuit, comprising:

• forming a bottom electrode having electrical contact to a conductive region in a semiconductor base material;
• providing a first diode element, comprising at least one of a doped chalcogenide glass and a doped polysilicon formed over a tungsten silicide layer over the bottom electrode;
• forming a glass electrolyte layer over the first diode element, the glass electrolyte layer having metal ions therein and being able to selectively change resistance under the influence of an applied voltage;
• and
• forming a top electrode over the glass electrolyte layer.

A method of fabricating a programmable conductor random access memory (PCRAM), comprising:

• forming an insulating layer with an array of vias, each via having a bottom surface;
• providing at least one diode element in each via, said diode element comprising at least one of a doped chalcogenide glass and a doped polysilicon formed over a tungsten silicide layer;
• and
• providing a chalcogenide glass memory element over the diode element and in each via, the chalcogenide glass memory element having metal ions therein and selectively changing resistances under the influence of an applied voltage.

A programmable memory cell, comprising:

• a first diode element comprising a polysilicon layer within a via formed in an insulating layer;
• a second diode element comprising a doped polysilicon substrate region forming the bottom of said via;
• and
• a glass electrolyte element formed in said via over the first diode element, the glass electrolyte element having metal ions therein and being able to selectively change resistance under the influence of an applied voltage.

A programmable memory cell comprising:

• a first polysilicon layer having a first conductivity type;
• a doped silicon substrate region having a second conductivity type;
• a layer of germanium selenide glass containing metal ions formed in a via over the first polysilicon layer;
• and
• a top electrode over the layer of germanium selenide glass.

A method of fabricating memory cells for a memory array in an integrated circuit, comprising:

• forming a first diode element, having a first conductivity type, said first diode element comprising a doped region in a semiconductor base material;
• providing a second diode element, having a second conductivity type, said first diode element comprising a polysilicon layer;
• forming a glass electrode layer over the first diode element, the glass electrolyte layer having metal ions therein and being capable changing resistance under the influence of an applied voltage;
• and
• forming a top electrode over the glass electrolyte layer.