High-speed photon detector and no cost method of forming the detector
AssigneeNational Semiconductor Corporation
InventorsPeter J. Hopper, Philipp Lindorfer, Vladislav Vashchenko
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Abstract
A photon detector capable of detecting gigahertz frequency optical signals utilizes a layer of photonic material that is formed below of the coil of an inductor. When a pulsed light source is applied to the layer of photonic material, the photonic material generates eddy currents that alter the magnetic flux of the inductor. The signals can then be detected by detecting the change in magnetic flux of the inductor.
Claims16
A photon detector formed on a semiconductor material that has a conductivity type, the photon detector comprising:
- a layer of insulation material formed on the semiconductor material;
- a layer of photonic material formed on the layer of insulation material;
- a plurality of layers of isolation material that are formed on the layer of insulation material over the layer of photonic material;
- and
- an inductor that is formed in the plurality of isolation layers, the layer of photonic material generating more electron-hole pairs than the surrounding layers of isolation material when struck by light.
A method of detecting light received by a detector, the detector having:
- a layer of photonic material formed over a region of semiconductor material;
- a plurality of layers of isolation material that are formed over the layer of photonic material;
- and
- an inductor that is formed in the plurality of isolation layers,
- the method comprising the steps of:
- measuring a first impedance of the inductor when no light strikes the layer of photonic material;
- measuring a second impedance of the inductor when light strikes the layer of photonic material;
- and
- detecting an optical signal by detecting changes in the impedance of the inductor.
A method of forming an optical detector on a region of semiconductor material that has a conductivity type, the method comprising the steps of:
- forming a layer of insulation material on the semiconductor material;
- forming a layer of photonic material on the layer of insulation material;
- forming a plurality of layers of isolation material on the layer of insulation material over the layer of photonic material;
- and
- forming an inductor in the plurality of isolation layers, the layer of photonic material generating more electron-hole pairs than the surrounding layers of isolation material when struck by light.
Dependencies are inferred from the claim text.