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US 6,855,957 B1Granted
Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Jun Koyama
Life of this patent
Estimating the term…
Abstract
A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. By performing the formation of the pixel electrode, the source region and the drain region by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized.
Claims56
A semiconductor device comprising:
- a gate wiring having a taper shape formed over an insulating surface;
- an insulating film formed over said gate wiring;
- an amorphous semiconductor film formed over said insulating film;
- first and second impurity regions formed over said amorphous semiconductor film;
- a source wiring including a first portion formed over one of said first impurity region and said second impurity region and a second portion extending in an orthogonal direction with respect to said gate wiring;
- an electrode formed over the other of said first and said second impurity regions;
- a pixel electrode formed over said electrode;
- wherein said amorphous semconductor film and an amorphous semiconductor film containing an impurity element which imports n-type conductivity are laminated under the second portion of said souce wiring,
- a capacitor portion comprising:
- a layer comprising the conductive material over the insulating surface;
- the insulating film formed over the layer;
- and
- the pixel electrode extending over the insulating film,
- a terminal portion comprising:
- a first layer comprising the first conductive material over the insulating surface;
- a second layer over the first layer, the second layer comprising the second conductive material.
13 more elements
A semiconductor device comprising:
- a gate wiring formed over an insulating surface;
- an insulating film formed over said gate wiring;
- an amorphous semiconductor film formed over said insulating film;
- first and second impurity regions formed over said amorphous semiconductor film;
- a source wiring including a first portion formed over one of said first impurity region and said second impurity region and a second portion extending in an orthogonal direction with respect to said gate wiring;
- an electrode formed over the other of said first and said second impurity regions;
- a pixel electrode formed over said electrode;
- a capacitor portion comprising:
- a layer comprising the conductive material over the insulating surface;
- the insulating film formed over the layer;
- and
- the pixel electrode extending over the insulating film,
- a terminal portion comprising:
- a first layer comprising the first conductive material over the insulating surface;
- a second layer over the first layer, the second layer comprising the second conductive material.
12 more elements
A semiconductor device comprising:
- a gate wiring formed over an insulating surface;
- an insulating film formed over said gate wiring;
- an amorphous semiconductor film formed over said insulating film;
- first and second impurity regions formed on said amorphous semiconductor film;
- a source wiring including a first portion formed over one of said first impurity region and said second impurity region and a second portion extending in an orthogonal direction with respect to said gate wiring;
- an electrode formed over the other of said first and said second impurity region;
- and
- a pixel electrode formed over said electrode;
- wherein said amorphous semiconductor film and an amorphous semiconductor film containing an impurity element which imparts n-type conductivity are laminated under the second portion of said source wiring.
6 more elements
A semiconductor device comprising:
- a gate wiring having a taper shape and a convex portion formed over an insulating surface;
- an insulating film formed over said gate wiring;
- an amorphous semiconductor film formed over said insulating film;
- first and second impurity regions formed over said amorphous semiconductor film;
- a source wiring including a first portion formed over one of said first impurity region and said second impurity region and a second portion extending in an orthogonal direction with respect to said gate wiring;
- an electrode formed over the other of said first and said second impurity regions;
- and
- a pixel electrode possessing reflective characteristics and an uneven surface formed over said insulating film which is formed over said electrode and has an uneven surface
- wherein said amorphous semiconductor film and an amorphous semiconductor film containing an impurity element which imparts n-type conductivity are laminated under the second portion of said source wiring,
- a capacitor portion comprising:
- a layer comprising the conductive material over the insulating surface;
- the insulating film formed over the layer;
- and
- the pixel electrode extending over the insulating film,
- a terminal portion comprising:
- a first layer comprising the first conductive material over the insulating surface;
- a second layer over the first layer, the second layer comprising the second conductive material.
14 more elements
A semiconductor device comprising:
- a gate wiring comprising a conductive material formed over an insulating surface;
- an insulating film formed over said gate wiring;
- an amorphous semiconductor film formed over said insulating film;
- first and second impurity regions over said amorphous semiconductor film;
- a source wiring including a first portion formed over one of said first and second impurity regions and a second portion extending in an orthogonal direction with respect to said gate wiring;
- an electrode formed over the other of said first and second impurity regions;
- and
- a pixel electrode formed over said electrode;
- wherein one end surface of said first impurity region is coplanar with an end surface of said amorphous semiconductor film and said second portion, and one of end surface of said second impurity region is coplanar with an end surface of said amorphous semiconductor film and said electrode,
- a capacitor portion comprising:
- a layer comprising the conductive material over the insulating surface;
- the insulating film formed over the layer;
- and
- the pixel electrode extending over the insulating film.
11 more elements
A semiconductor device comprising:
- a gate wiring comprising a conductive material formed over an insulating surface;
- an insulating film formed over said gate wiring;
- an amorphous semiconductor film formed over said insulating film;
- first and second impurity regions over said amorphous semiconductor film;
- a source wiring including a first portion formed over one of said first and second impurity regions and a second portion extending in an orthogonal direction with respect to said gate wiring;
- an electrode formed over the other of said first and second impurity regions;
- and
- a pixel electrode formed over said electrode;
- a capacitor portion comprising:
- a layer comprising the conductive material over the insulating surface;
- the insulating film formed over the layer;
- and
- the pixel electrode extending over the insulating film;
- and
- a terminal portion comprising;
- a first layer comprising the first conductive material over the insulating surface;
- a second layer over the first layer, the second layer comprising second conductive material.
14 more elements
A semiconductor device comprising:
- a gate wiring comprising a conductive material and a convex portion formed over an insulating surface;
- an insulating film formed over said gate wiring;
- an amorphous semiconductor film formed over said insulating film;
- first and second impurity regions formed over said amorphous semiconductor film;
- a source wiring including a first portion formed over one of said first and second impurity regions and a second portion extending in an orthogonal direction with respect to said gate wiring;
- an electrode formed over the other of said first and second impurity regions;
- and
- a pixel electrode formed over said electrode;
- wherein said amorphous semiconductor film and an amorphous semiconductor film containing an impurity element which imparts n-type conductivity are laminated under the second portion of said source wiring,
- a capacitor portion comprising:
- a layer comprising the conductive material over the insulating surface;
- the insulating film formed over the layer;
- and
- the pixel electrode extending over the insulating film.
11 more elements
A semiconductor device comprising:
- a gate wiring comprising a conductive material formed over an insulating surface;
- an insulating film formed over said gate wiring;
- an amorphous semiconductor film formed over said insulating film;
- first and second impurity regions over said amorphous semiconductor film;
- a source wiring including a first portion formed over said first impurity region and
- a second portion extending in an orthogonal direction with respect to said gate wiring;
- an electrode formed over the other of said first and second impurity regions;
- and
- a pixel electrode possessing reflective characteristics and an uneven surface, formed over said insulating film which is formed over said electrode and has an uneven surface;
- a capacitor portion comprising:
- a layer comprising the conductive material over the insulating surface;
- the insulating film formed over the layer;
- and
- the pixel electrode extending over the insulating film.
11 more elements
A semiconductor device comprising:
- a gate wiring comprising a first conductive material formed over an insulating surface;
- an insulating film formed over said gate wiring;
- an amorphous semiconductor film formed over said insulating film;
- first and second impurity regions over said amorphous semiconductor film;
- a source wiring including a first portion formed over one of said first and second impurity regions and a second portion extending in an orthogonal direction with respect to said gate wiring;
- an electrode formed over the other of said first and second impurity regions;
- and
- a pixel electrode comprising a second conductive material formed over said electrode;
- a terminal portion comprising:
- a first layer comprising the first conductive material over the insulating surface;
- a second layer over the first layer, the second layer comprising the second conductive material.
8 more elements
A semiconductor device comprising:
- a gate wiring having a taper shape comprising a first conductive material formed over an insulating surface;
- an insulating film formed over said gate wiring;
- an amorphous semiconductor film formed over said insulating film;
- first and second impurity regions over said amorphous semiconductor film;
- a source wiring including a first portion formed over one of said first and second impurity regions and a second portion extending in an orthogonal direction with respect to said gate wiring;
- an electrode formed over the other of said first and second impurity regions;
- a pixel electrode comprising a second conductive material formed over said electrode;
- a terminal portion comprising:
- a first layer comprising the first conductive material over the insulating surface;
- a second layer over the first layer, the second layer comprising the second conductive material.
7 more elements
A semiconductor device comprising:
- a gate wiring comprising a first conductive material and a convex portion formed over an insulating surface;
- an insulating film formed over said gate wiring;
- an amorphous semiconductor film formed over said insulating film;
- first and second impurity regions formed over said amorphous semiconductor film;
- a source wiring including a first portion formed over one of said first and second impurity regions and a second portion extending in an orthogonal direction with respect to said gate wiring;
- an electrode formed over the other of said first and second impurity regions;
- and
- a pixel electrode comprising a second conductive material formed over said electrode;
- wherein said amorphous semiconductor film and an amorphous semiconductor film containing an impurity element which imparts n-type conductivity are laminated under the second portion of said source wiring,
- a terminal portion comprising:
- a first layer comprising the first conductive material over the insulating surface;
- a second layer over the first layer, the second layer comprising the second conductive material.
9 more elements
A semiconductor device comprising:
- a gate wiring comprising a first conductive material formed over an insulating surface;
- an insulating film formed over said gate wiring;
- an amorphous semiconductor film formed over said insulating film;
- first and second impurity regions over said amorphous semiconductor film;
- a source wiring including a first portion formed over one of said first and second impurity regions and a second portion extending in an orthogonal direction with respect to said gate wiring;
- an electrode formed over the other of said first and second impurity regions;
- and
- a pixel electrode comprising a second conductive material and possessing reflective characteristics and an uneven surface, formed over said insulating film which is formed over said electrode and has an uneven surface;
- a terminal portion comprising:
- a first layer comprising the first conductive material over the insulating surface;
- a second layer over the first layer, the second layer comprising the second conductive material.
8 more elements
A semiconductor device comprising:
- a gate wiring having a taper shape formed over an insulating surface;
- an insulating film formed over said gate wiring;
- an amorphous semiconductor film formed over said insulating film;
- first and second impurity regions over said amorphous semiconductor film;
- a source wiring including a first portion formed over one of said first and second impurity regions and a second portion extending in an orthogonal direction with respect to said gate wiring;
- an electrode formed over the other of said first and second impurity regions;
- and
- a pixel electrode formed over said electrode.
5 more elements
A semiconductor device comprising:
- a gate wiring having a taper shape formed over an insulating surface;
- an insulating film formed over said gate wiring;
- an amorphous semiconductor film formed over said insulating film;
- first and second impurity regions over said amorphous semiconductor film;
- a source wiring including a first portion formed over one of said first and second impurity regions and a second portion extending in an orthogonal direction with respect to said gate wiring;
- an electrode formed over the other of said first and second impurity regions;
- and
- a pixel electrode formed over said electrode, and
- a capacitor portion comprising:
- a layer comprising the conductive material over the insulating surface;
- the insulating film formed over the layer;
- and
- the pixel electrode extending over the insulating film.
10 more elements
A semiconductor device comprising:
- a gate wiring having a taper shape and a convex portion formed over an insulating surface;
- an insulating film formed over said gate wiring;
- an amorphous semiconductor film formed over said insulating film;
- first and second impurity regions formed over said amorphous semiconductor film;
- a source wiring including a first portion formed over one of said first and second impurity regions and a second portion extending in an orthogonal direction with respect to said gate wiring;
- an electrode formed over the other of said first and second impurity regions;
- and
- a pixel electrode formed over said electrode;
- wherein said amorphous semiconductor film and an amorphous semiconductor film containing an impurity element which imparts n-type conductivity are laminated under the second portion of said source wiring.
6 more elements
A semiconductor device comprising:
- a gate wiring having a taper shape formed over an insulating surface;
- an insulating film formed over said gate wiring;
- an amorphous semiconductor film formed over said insulating film;
- first and second impurity regions over said amorphous semiconductor film;
- a source wiring including a first portion formed over one of said first and second impurity regions and a second portion extending in an orthogonal direction with respect to said gate wiring;
- an electrode formed over the other of said first and second impurity regions;
- and
- a pixel electrode possessing reflective characteristics and an uneven surface, formed over said insulating film which is formed over said electrode and has an uneven surface.
5 more elements
Dependencies are inferred from the claim text.