Fluorinated polythiophenes and devices thereof
AssigneeXerox Corporation
InventorsBeng S. Ong, Lu Jiang, Yiliang Wu, Ping Liu
Life of this patent
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Abstract
An electronic device containing a polythiophene wherein R is an alkyl alkoxy; x represents the number of R groups; R′ is CF3, alkoxy, alkyl, or optionally alkylene; y and z represent the number of segments; and a and b represent the mole fractions of each moiety, respectively, wherein the sum of a+b is equal to about 1.
Claims31
An electronic device comprised of a polythiophene
- wherein R is an alkyl, alkoxy;
- x represents the number of R groups;
- R′ is CF3, alkoxy, alkyl, or optionally alkylene;
- y and z represent the number of segments;
- and a and b represent the mole fractions of each moiety, respectively, wherein the sum of a+b is equal to about 1.
A thin film transistor comprised of a substrate, a gate electrode, a gate dielectric layer, a source electrode and a drain electrode, and in contact with the source/drain electrodes and the gate dielectric layer a layer comprised of a polythiophene (I)
- wherein R is an alkyl or alkoxy;
- x represents the number of R groups;
- R′ is CF3, alkoxy, or alkyl;
- y and z represent the number of repeating segments;
- and a and b represent the mole fractions of each segment.
An electronic device comprised of a substrate, a gate electrode, a source electrode, and a polythiophene
- wherein R is an alkyl;
- x is the number of R groups, R′ is CF3;
- y and z represent the number of segments;
- and a and b represent the mole fractions of each moiety.
Dependencies are inferred from the claim text.