Plasma polymerized electron beam resist

A process for producing a pattern of negative electron beam resist, comprising:

• (a) depositing a layer of plasma polymerized fluoropolymer on a face of a substrate, the plasma polymerized fluoropolymer forming the negative electron beam resist;
• (b) producing an electron beam;
• (c) moving the electron beam on the layer of plasma polymerized fluoropolymer to define the pattern, the layer then having exposed fluoropolymer areas defining the pattern and unexposed fluoropolymer areas;
• and
• (d) removing the unexposed fluoropolymer areas to leave only the pattern on the face of the substrate;
• wherein:
• removing the unexposed fluoropolymer areas includes dry etching said unexposed fluoropolymer areas;
• and
• said process further comprises, prior to (d), treating the patterned layer with a base solution to decrease a dry etch resistance of the unexposed fluoropolymer areas.

A process for producing a pattern in a layer of negative electron beam resist, comprising:

• (a) depositing the layer of negative electron beam resist on a face of a substrate;
• (b) producing an electron beam;
• (c) moving the electron beam on the layer of negative electron beam resist to define the pattern, the layer then having exposed resist areas defining the pattern and unexposed resist areas;
• (d) treating the patterned layer with a base solution to decrease a dry etch resistance of the unexposed resist areas;
• and
• (e) dry etching the unexposed resist areas to leave only the pattern on the face of the substrate.