Method for fabricating a gate structure
OwnerPadmapani C. Nallan, Ajay Kumarinventors
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Abstract
A method for fabricating a gate structure having a polysilicon electrode using an oxygen-free chemistry to etch the polysilicon. In one embodiment, the chemistry further includes nitrogen.
Claims51
A method for fabricating a gate structure having a polysilicon electrode and an oxygen permeable dielectric layer deposited on a semiconductor substrate, comprising:
- etching a defined portion of a polysilicon layer in a plasma comprising an oxygen-free chemistry until all of the defined portion is removed;
- and
- nitriding the oxygen permeable dielectric layer.
A method for fabricating a gate structure having a polysilicon electrode and an oxygen permeable dielectric layer deposited on a semiconductor substrate, comprising:
- performing a main etch of a polysilicon layer in a plasma comprising an oxygen-free gas chemistry;
- performing an overetch of the polysilicon layer in a plasma comprising an oxygen-free gas chemistry;
- and
- nitriding the oxygen permeable dielectric layer.
A computer-readable medium containing software that when executed by a computer causes an etch reactor to plasma etch a gate structure having a polysilicon electrode and an oxygen permeable dielectric layer deposited on a semiconductor substrate using a method comprising:
- etching a defined portion of a polysililcon layer in a plasma comprising an oxygen-free gas chemistry until all of the defined portion is removed;
- and
- nitriding the oxygen permeable dielectric layer.
A computer-readable medium containing software that when executed by a computer causes an etch reactor to plasma etch a gate structure having a polysilicon electrode and an oxygen permeable dielectric layer deposited on a semiconductor substrate using a method comprising:
- performing a main etch of a polysilicon layer in a plasma comprising an oxygen-free gas chemistry;
- performing an overetch of the polysilicon layer in a plasma comprising an oxygen-free gas chemistry;
- and
- nitriding the oxygen permeable dielectric layer.
Dependencies are inferred from the claim text.