Methods of forming via plugs using an aerosol stream of particles to deposit conductive materials
AssigneeMicron Technology, Inc.
InventorKyle K. Kirby
Life of this patent
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Abstract
An aerosol stream of particles of a conductive material is directed into a via of an integrated circuit device to deposit the conductive material within the via to form a via plug.
Claims20
A method of forming a via plug, the method comprising:
- directing an aerosol stream of particles of a first conductive material onto a sidewall of a via disposed in a substrate or in a dielectric layer disposed on a base layer of an integrated circuit device to form a seed layer of the first conductive material on the sidewall;
- and
- plating the seed layer with a second conductive material.
A method of forming an integrated circuit device, the method comprising:
- forming a dielectric layer on a base layer of the integrated circuit device;
- forming a via in the dielectric layer terminating at the base layer;
- and
- forming a via plug within the via, wherein forming the via plug comprises:
- directing an aerosol stream of particles of a first conductive material onto a sidewall of the via to form a seed layer of the first conductive material on the sidewall;
- and
- plating the seed layer with a second conductive material.
A method of manufacturing an integrated memory circuit, wherein the memory circuit comprises an array of memory cells connected to column and row address decoders and a sensing circuit, the method comprising:
- forming a via plug in the memory circuit, wherein forming the via plug comprises:
- directing an aerosol stream of particles of a first conductive material onto a sidewall of a via of the memory circuit to deposit the conductive material within the via to form a seed layer of the first conductive material on the sidewall;
- and
- plating the seed layer with a second conductive material.
A method of forming a via plug, the method comprising:
- forming a through-hole via that passes completely through a substrate or blind-hole via that terminates at a base layer of an integrated circuit device;
- directing an aerosol stream of particles of a first conductive material onto a sidewall of the through-hole via or the blind-hole via to form a seed layer of the first conductive material on the sidewall;
- and
- plating the seed layer with a second conductive material.
A method of forming a via plug, the method comprising:
- forming a through-hole via that passes completely through a substrate;
- covering a first end of the via;
- directing an aerosol stream of particles of a first conductive material through a second end of the via opposite the first end onto a sidewall of the via to form a seed layer of the first conductive material on the sidewall;
- and
- plating the seed layer with a second conductive material.
A method of forming an integrated circuit device, the method comprising:
- forming a dielectric layer on a base layer of the integrated circuit device;
- forming a through-hole via that passes completely through the dielectric layer and the base layer;
- covering a first end of the via;
- forming a via plug within the via, wherein forming the via plug comprises:
- directing an aerosol stream of particles of a first conductive material through a second end of the via opposite the first end onto a sidewall of the via to form a seed layer of the first conductive material on the sidewall;
- and
- plating the seed layer with a second conductive material.
Dependencies are inferred from the claim text.