Semiconductor processing methods of forming contact openings, methods of forming electrical connections and interconnections, and integrated circuitry

A semiconductor processing method of forming a contact opening to a conductive line comprising:

• forming a conductive line over a substrate, the conductive line having a first line width at one location and a second line width at another location, at least a portion of the second line width defining a contact pad with, which electrical connection is desired;
• forming a conductive plug comprising at least planarizing conductive material within a plug opening laterally proximate the contact pad, the conductive plug and the contact pad defining an effective contact pad having an effective contact pad width greater than the second line width;
• and
• etching a contact opening to at least a portion of the effective contact pad through material overlying the conductive line and plug.

A semiconductor processing method of forming an electrical interconnection comprising:

• forming a plurality of conductive lines over a substrate, individual conductive lines having contact pads with which electrical communication is desired;
• forming a conductive plug comprising at least electrically isolating conductive material within a first opening with at least a portion of which the conductive plug is disposed laterally adjacent and between a contact pad and a next adjacent conductive line;
• forming a second opening extending to the contact pad and the conductive plug and extending through material overlying the contact pad;
• and
• wherein the forming of the conductive plug comprises:
• forming insulative material laterally adjacent and between the contact pad and the next adjacent conductive line;
• forming the first opening within the insulative material;
• and
• forming conductive material to fill an entirety of the first opening.

A semiconductor processing method of forming a conductive interconnection comprising:

• forming a plurality of conductive lines over a substrate, individual conductive lines having respective first line widths at respective first locations and respective second line widths at respective second locations which are different from the respective first locations;
• at least portions of the respective second line widths being greater than the first line widths and having conductive portions which define respective contact pads with which electrical communication is desired;
• at least one conductive line second line width being disposed laterally proximate at least one conductive line first line width of an adjacent line;
• forming a first conductive material between the at least one conductive line second line width and the at least one conductive line first line width;
• and
• etching an opening through material overlying the substrate and over at least one contact pad.

A semiconductor processing method of forming a conductive interconnection comprising:

• forming a plurality of conductive lines over a substrate, individual conductive lines having respective first line widths at respective first locations and respective second line widths at respective second locations which are different from the respective first locations;
• at least portions of the respective second line widths being different than the first line widths and having conductive portions which define respective contact pads with which electrical communication is desired;
• at least one conductive line second line width being disposed laterally proximate at least one conductive line first line width of an adjacent line;
• forming a contact opening through first insulating material overlying the substrate and the plurality of conductive lines;
• forming a first conductive material between the at least one conductive line second line width and the at least one conductive line first line width;
• forming an opening extending through material overlying the first insulating material to at least one contact pad;
• and
• forming a second conductive material within the opening, wherein the first conductive material is formed to overlap with the portion of the second line width defining the contact pad laterally proximate the one conductive line first line width and wherein the contact opening is essentially self-aligned relative to the at least one conductive line second line width and its associated adjacent line first line width.

A semiconductor processing method of forming a conductive interconnection comprising:

• forming a plurality of conductive polysilicon lines over a semiconductive substrate, individual conductive lines having respective first line widths at respective first locations and respective second line widths at respective second locations which are different from the respective first locations;
• at least portions of the respective second line widths being greater than the first line widths and having conductive portions which define respective contact pads with which electrical communication is desired;
• at least one conductive line second line width being disposed laterally proximate at least one conductive line first line width of an adjacent line;
• forming a first conductive material between the at least one conductive line second line width and the at least one conductive line first line width;
• etching an opening through material overlying the substrate and over at least one contact pad;
• and
• forming a second conductive material within the opening.

A semiconductor processing method of forming an electrical interconnection comprising:

• forming a plurality of conductive lines over a substrate, individual conductive lines having contact pads with which electrical communication is desired;
• forming a conductive plug at least a portion of which is disposed laterally adjacent and between a contact pad and a next adjacent conductive line;
• forming an opening extending to the contact pad and the conductive plug and extending through insulative material overlying the contact pad to the contact pad and to the conductive plug, wherein the conductive plug is laterally proximate the contact pad;
• and
• wherein the conductive line comprises an outermost surface and the conductive plug comprises a portion which overlaps with the conductive line outermost surface.

A semiconductor processing method of forming an electrical connection comprising:

• forming a conductive runner over a substrate outer surface, the conductive runner having a contact pad with which electrical communication is desired;
• forming a conductive plug laterally proximate the contact pad;
• and
• outwardly exposing at least some of the contact pad and at feast some of the conductive plug through material overlying the contact pad and the conductive plug;
• and wherein:
• the conductive runner comprises an outermost surface which defines a conductive runner height outwardly of the substrate outer surface;
• and
• the forming of the conductive plug comprises forming the plug to extend outwardly from the substrate outer surface a distance which is less than the conductive runner height.

A semiconductor processing method of forming an electrical connection comprising:

• forming a conductive runner over a substrate outer surface, the conductive runner having a contact pad with which electrical communication is desired;
• forming a conductive plug laterally proximate the contact pad;
• and
• outwardly exposing at least some of the contact pad and at least some of the conductive plug through material overlying the contact pad and the conductive plug;
• and wherein:
• the conductive runner comprises an outermost surface which defines a conductive runner height outwardly of the substrate outer surface;
• the forming of the conductive plug comprises forming the plug to extend outwardly from the substrate outer surface a distance which is greater than the conductive runner height;
• and
• the conductive plug comprises a portion which overlaps with the conductive runner outermost surface.

A semiconductor processing method of forming an electrical connection comprising:

• forming a conductive runner over a substrate outer surface, the conductive runner having a contact pad with which electrical communication is desired;
• forming a conductive plug laterally proximate the contact pad;
• and
• outwardly exposing at least some of the contact pad and at least some of the conductive plug through material overlying the contact pad and the conductive plug;
• and wherein:
• the forming of the conductive plug comprises forming another conductive plug laterally proximate the contact pad, the conductive plugs being disposed on either side of the contact pad;
• the conductive runner comprises an outermost surface which defines a conductive runner height outwardly of the substrate outer surface;
• the forming of the conductive plugs comprises forming the plugs to extend outwardly from the substrate outer surface respective distances which are greater than the conductive runner height;
• and
• at least one of the conductive plugs comprises a portion which overlaps with the conductive runner outermost surface.

A semiconductor processing method of forming an electrical connection comprising:

• forming a conductive runner over a substrate outer surface, the conductive runner having a contact pad with which electrical communication is desired;
• forming a conductive plug laterally proximate the contact pad;
• and
• outwardly exposing at least some of the contact pad and at least some of the conductive plug through material overlying the contact pad and the conductive plug;
• and wherein:
• the forming of the conductive plug comprises forming another conductive plug laterally proximate the contact pad, the conductive plugs being disposed on either side of the contact pad;
• the conductive runner comprises an outermost surface which defines a conductive runner height outwardly of the substrate outer surface;
• the forming of the conductive plugs comprises forming the plugs to extend outwardly from the substrate outer surface respective distances which are greater than the conductive runner height;
• and
• both conductive plugs comprise respective portions which overlap with the conductive runner outermost surface.

A semiconductor processing method of forming an electrical connection comprising:

• forming a conductive runner over a substrate outer surface, the conductive runner having a contact pad with which electrical communication is desired;
• forming a conductive plug laterally proximate the contact pad;
• outwardly exposing at least some of the contact pad and at least some of the conductive plug through material overlying the contact pad and the conductive plug;
• and
• wherein the contact pad has a width greater than a line width of the conductive runner.

A semiconductor processing method of forming an electrical connection comprising:

• forming a conductive runner over a substrate outer surface, the conductive runner having a contact pad with which electrical communication is desired;
• forming a conductive plug laterally proximate the contact pad;
• outwardly exposing at least some of the, contact pad and at least some of the conductive plug by a single opening through material overlying the contact pad and the conductive plug;
• and
• wherein the conductive runner comprises an outermost surface which defines a conductive runner height outwardly of the substrate outer surface, and wherein the forming of the conductive plug comprises forming the plug to extend outwardly from the substrate outer surface a distance which is less than the conductive runner height.

A semiconductor processing method of forming an electrical connection comprising:

• forming a conductive runner over a substrate outer surface, the conductive runner having a contact pad with which electrical communication is desired;
• forming a conductive plug laterally proximate the contact pad;
• outwardly exposing at least some of the contact pad arid at least some of the conductive plug by a single opening through material overlying the contact pad and the conductive plug;
• and
• wherein the conductive runner comprises an outermost surface which defines a conductive runner height outwardly of the substrate outer surface, and wherein the forming of the conductive plug comprises forming the plug to extend outwardly from the substrate outer surface a distance which is greater than the conductive runner height.

A semiconductor processing method of forming an electrical connection comprising:

• forming a conductive runner over a substrate outer surface, the conductive runner having a contact pad with which electrical communication is desired;
• forming a conductive plug laterally proximate the contact pad;
• outwardly exposing at least some of the contact pad and at least some of the conductive plug by a single opening through material overlying the contact pad and the conductive plug;
• and
• wherein the forming of the conductive plug comprises forming another conductive plug laterally proximate the contact pad, the conductive plugs being disposed on either side of the contact pad, and wherein the conductive runner comprises an outermost surface which defines a conductive runner height outwardly of the substrate outer surface, and wherein the forming of the conductive plugs comprises forming the plugs to extend outwardly from the substrate outer surface respective distances which are greater than the conductive runner height.

A semiconductor processing method of forming an electrical connection comprising:

• forming a conductive runner over a substrate outer surface, the conductive runner having a contact pad with which electrical communication is desired;
• forming a conductive plug laterally proximate the contact pad;
• outwardly exposing at least some of the contact pad and at least some of the conductive plug by a single opening through material overlying the contact pad and the conductive plug;
• and
• wherein the contact pad has a width greater than a line width of the conductive runner.

A semiconductor processing method of forming an electrical connection comprising:

• forming a conductive runner over a substrate outer surface, the conductive runner having a contact pad with which electrical communication is desired;
• forming a conductive plug laterally proximate the contact pad;
• outwardly exposing at least some of the contact pad and at least some of the conductive plug by a single opening through material overlying the contact pad and the conductive plug;
• and
• wherein the forming of the conductive plug comprises forming:
• insulative material laterally proximate the contact pad;
• forming a plug opening within the insulative material;
• and
• forming conductive material to fill an entirety of the plug opening.

A semiconductor processing method of forming a contact opening to a conductive line comprising:

• forming a conductive line over a substrate, the conductive line having a first line width at one location and a second line width at another location, at least a portion of the second line width defining a contact pad with which electrical connection is desired;
• forming a conductive plug laterally proximate the contact pad, the conductive plug and the contact pad defining an effective contact pad having an effective contact pad width greater than the second line width;
• etching a contact opening to at least a portion of the effective contact pad through material overlying the conductive line and plug;
• and
• wherein the second line width is greater than the first line width.

A semiconductor processing method of forming a contact opening to a conductive line comprising:

• forming a conductive line over a substrate, the conductive line having a first line width at one location and a second line width at another location, at least a portion of the second line width defining a contact pad with which electrical connection is desired;
• forming a conductive plug laterally proximate the contact pad, the conductive plug and the contact pad defining an effective contact pad having an effective contact pad width greater than the second line width;
• etching a contact opening to at least a portion of the effective contact pad through material overlying the conductive line and plug;
• and
• wherein the effective contact pad comprises a generally non-planar outermost surface.

A semiconductor processing method of forming a contact opening to a conductive line comprising:

• forming a conductive line over a substrate, the conductive line having a first line width at one location and a second line width at another location, at least a portion of the second line width defining a contact pad with which electrical connection is desired;
• forming a conductive plug laterally proximate the contact pad, the conductive plug and the contact pad defining an effective contact pad having an effective contact pad width greater than the second line width;
• etching a contact opening to at least a portion of the effective contact pad through material overlying the conductive line and plug;
• and
• wherein the forming of the conductive plug comprises:
• forming insulative material laterally proximate the contact pad;
• forming a plug opening within the insulative material;
• and
• forming conductive material to fill an entirety of the plug opening.

A semiconductor processing method of forming an electrical interconnection comprising:

• forming a plurality of conductive lines over a substrate, individual conductive lines having contact pads with which electrical communication is desired;
• forming a conductive plug at least a portion of which is disposed laterally adjacent and between a contact pad and a next adjacent conductive line;
• forming an opening extending to the contact pad and the conductive plug and extending through material overlying the contact pad;
• and
• wherein the conductive line comprises an outermost surface which defines a conductive line height outwardly of the substrate, and wherein the forming of the conductive plug comprises forming the plug to extend elevationally beyond the conductive line height.

A semiconductor processing method of forming an electrical interconnection comprising:

• forming a plurality of conductive fines over a substrate, individual conductive lines having contact pads with which electrical communication is desired;
• forming a conductive plug at least a portion of which is disposed laterally adjacent and between a contact pad and a next adjacent conductive line;
• forming an opening extending to the contact pad and the conductive plug and extending through material overlying the contact pad;
• and
• wherein the forming of the conductive plug comprises forming another conductive plug at least a portion of which is disposed laterally adjacent and between the contact pad and another next adjacent conductive line, the conductive plugs being disposed on either side of the contact pad, and wherein the conductive lines comprise outermost surfaces which define conductive line heights, and wherein the forming of the conductive plugs comprises forming the plugs to extend elevationally beyond the conductive line height, at least one of the plugs comprising a portion which overlaps with a conductive line outermost surface.

A semiconductor processing method of forming an electrical interconnection comprising:

• forming a plurality of conductive lines over a substrate, individual conductive lines having contact pads with which electrical communication is desired;
• forming a conductive plug at least a portion of which is disposed laterally adjacent and between a contact pad and a next adjacent conductive line;
• forming an opening extending to the contact pad and the conductive plug and extending through material overlying the contact pad;
• and
• wherein the forming of the conductive plug comprises:
• forming insulative material laterally adjacent and between the contact pad and the next adjacent conductive line;
• forming a plug opening within the insulative material;
• and
• forming conductive material to fill an entirety of the plug opening.

A semiconductor processing method of forming an electrical interconnection comprising:

• forming a plurality of conductive lines over a substrate, individual conductive lines having contact pads with which electrical communication is desired:
• forming a conductive plug at least a portion of which is disposed laterally adjacent and between a contact pad and a next adjacent conductive line;
• forming an opening extending to the contact pad and the conductive plug and extending through insulative material overlying the contact pad to the contact pad and to the conductive plug, wherein the conductive plug is laterally proximate the contact pad;
• and
• wherein the conductive line comprises an outermost surface which defines a conductive line height outwardly of the substrate, and wherein the forming of the conductive plug comprises forming the plug to extend elevationally beyond the conductive line height.

A semiconductor processing method of forming an electrical interconnection comprising:

• forming a plurality of conductive lines over a substrate, individual conductive lines having contact pads with which electrical communication is desired;
• forming a conductive plug at least a portion of which is disposed laterally adjacent and between a contact pad and a next adjacent conductive line;
• forming an opening extending to the contact pad and the conductive plug and extending through insulative material overlying the contact pad to the contact pad and to the conductive plug, wherein the conductive plug is laterally proximate the contact pad;
• and
• wherein the conductive line comprises an outermost surface and the conductive plug comprises a portion which overlaps with a portion of the next adjacent conductive line.

A semiconductor processing method of forming an electrical interconnection comprising:

• forming a plurality of conductive lines over a substrate, individual conductive lines having contact pads with which electrical communication is desired;
• forming a conductive plug at least a portion of which is disposed laterally adjacent and between a contact pad and a next adjacent conductive line;
• forming an opening extending to the contact pad and the conductive plug and extending through insulative material overlying the contact pad to the contact pad and to the conductive plug, wherein the conductive plug is laterally proximate the contact pad;
• and
• wherein the forming of the conductive plug comprises forming another conductive plug at least a portion of which is disposed laterally adjacent and between the contact pad and another next adjacent conductive line, arid wherein the conductive plugs being disposed on either side of the contact pad, and wherein the conductive lines comprise outermost surfaces which define conductive line heights, and wherein the forming of the conductive plugs comprises forming the plugs to extend elevationally beyond the conductive line height, at least one of the plugs comprising a portion which overlaps with a conductive line outermost surface.

A semiconductor processing method of forming an electrical interconnection comprising:

• forming a plurality of conductive lines over a substrate, individual conductive lines having contact pads with which electrical communication is desired;
• forming a conductive plug at least a portion of which is disposed laterally adjacent and between a contact pad and a next adjacent conductive line;
• forming an opening extending to the contact pad and the conductive plug and extending through insulative material overlying the contact pad to the contact pad and to the conductive plug, wherein the conductive plug is laterally proximate the contact pad;
• and
• wherein the forming of the conductive plug comprises:
• forming insulative material laterally adjacent and between the contact pad and the next adjacent conductive line;
• forming a plug opening within the insulative material;
• and
• forming conductive material to fill an entirety of the plug opening.

A semiconductor processing method of forming an electrical interconnection comprising:

• forming a plurality of conductive lines over a substrate, individual conductive lines having contact pads with which electrical communication is desired;
• forming a conductive plug comprising at least electrically isolating conductive material within a first opening with at least a portion of which the conductive plug is disposed laterally adjacent and between a contact pad and a next adjacent conductive line;
• forming a second opening extending to the contact pad and the conductive plug and extending through material overlying the contact pad;
• and
• wherein the conductive lines comprise an outermost surface which defines a conductive line height outwardly of the substrate;
• and
• wherein the forming of the conductive plug comprises forming the plug to extend elevationally beyond the conductive line height.

A semiconductor processing method of forming an electrical interconnection comprising:

• forming a plurality of conductive lines over a substrate, individual conductive lines having contact pads with which electrical communication is desired;
• forming a conductive plug comprising at least electrically isolating conductive material within a first opening with at least a portion of which the conductive plug is disposed laterally adjacent and between a contact pad and a next adjacent conductive line;
• forming a second opening extending to the contact pad and the conductive plug and extending through material overlying the contact pad;
• wherein the forming of the conductive plug comprises forming another conductive plug at least a portion of which is disposed laterally adjacent and between the contact pad and another next adjacent conductive line, the conductive plugs being disposed on either side of the contact pad;
• wherein the conductive lines comprise outermost surfaces which define conductive line heights;
• and
• wherein the forming of the conductive plugs comprises forming the plugs to extend elevationally beyond the conductive line height, at least one of the plugs comprising a portion which overlaps with a conductive line outermost surface.

A semiconductor processing method of forming an electrical connection comprising:

• forming a conductive runner over a substrate outer surface, the conductive runner having a contact pad with which electrical communication is desired;
• forming a first opening which defines plural sidewalls within an insulating material;
• forming a conductive plug laterally proximate the contact pad wherein the forming comprises forming the plug using the plural sidewalls of the insulating material;
• outwardly exposing at least some of the contact pad and at least some of the conductive plug by a single opening through material overlying the contact pad and the conductive plug;
• wherein the conductive runner comprises an outermost surface which defines a conductive runner height outwardly of the substrate outer surface;
• and
• wherein the forming of the conductive plug comprises forming the plug to extend outwardly from the substrate outer surface a distance which is less than the conductive runner height.

A semiconductor processing method of forming an electrical connection comprising:

• forming a conductive runner over a substrate outer surface, the conductive runner having a contact pad with which electrical communication is desired;
• forming a first opening which defines plural sidewalls within an insulating material;
• forming a conductive plug laterally proximate the contact pad wherein the forming comprises forming the plug using the plural sidewalls of the insulating material;
• outwardly exposing at least some of the contact pad and at least some of the conductive plug by a single opening through material overlying the contact pad and the conductive plug;
• wherein the conductive runner comprises an outermost surface which defines a conductive runner height outwardly of the substrate cuter surface;
• and
• wherein the forming of the conductive plug comprises forming the plug to extend outwardly from the substrate outer surface a distance which is greater than the conductive runner height.

A semiconductor processing method of forming an electrical connection comprising:

• forming a conductive runner over a substrate outer surface, the conductive runner having a contact pad with which electrical communication is desired;
• forming a first opening which defines plural sidewalls within an insulating material;
• forming a conductive plug laterally proximate the contact pad wherein the forming comprises forming the plug using the plural sidewalls of the insulating material;
• outwardly exposing at least some of the contact pad and at least some of the conductive plug by a single opening through material overlying the contact pad and the conductive plug;
• wherein the forming of the conductive plug comprises forming another conductive plug laterally proximate the contact pad, the conductive plugs being disposed on either side of the contact pad;
• wherein the conductive runner comprises an outermost surface which defines a conductive runner height outwardly of the substrate outer surface;
• and
• wherein the forming of the conductive plugs comprises forming the plugs to extend outwardly from the substrate outer surface respective distances which are greater than the conductive runner height.

A semiconductor processing method of forming an electrical connection comprising:

• forming a conductive runner over a substrate outer surface, the conductive runner having a contact pad with which electrical communication is desired;
• forming a first opening which defines plural sidewalls within an insulating material;
• forming a conductive plug laterally proximate the contact pad wherein the forming comprises forming the plug using the plural sidewalls of the insulating material;
• outwardly exposing at least some of the contact pad and at least some of the conductive plug by a single opening through material overlying the contact pad and the conductive plug;
• and
• wherein the forming of the conductive plug comprises:
• forming the insulating material laterally proximate the contact pad;
• forming the first opening within the insulating material;
• and
• forming conductive material to fill an entirety of the first opening.