Method and device for making substrates
AssigneeS.O.I. Tec Silicon on Insulator Technologies
InventorsAtsushi Iwasaki, Bruno Ghyselen
Life of this patent
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Abstract
The invention concerns a method for making substrates, in particular for optics, electronics or optoelectronics. The method includes an operation which consists in implanting (100) atomic species beneath the surface of a material in the form of a cylindrical ingot (1), at a depth of implantation distributed about a certain value by bombardment of the atomic species on a zone of the ingot (1) cylindrical surface, and an operation which consists in removing (300), at a separation depth located proximate to the depth of implantation, the layer (2) of material located between the surface and the separation depth, to remove the layer (2) from the rest of the cylindrical ingot (1).
Claims30
A method of fabricating substrates, in particular for optics, electronics or opto-electronics, comprising an operation (100) of implanting atomic species under a surface of a material in a form of a cylindrical ingot (1) at an implantation depth distributed around a particular value by bombarding said atomic species onto an area of a cylindrical surface of the cylindrical ingot (1), and a detachment operation (300) at a detachment depth in the vicinity of an implantation depth of a layer (2) of material between the surface and the detachment depth to detach that layer (2) from a remainder of the cylindrical ingot (1).
A method for fabricating a substrate, comprising:
- providing a cylindrical ingot of a material that is useful to form an optic, electronic or optoelectronic substrate;
- implanting atomic species into the cylindrical ingot through a cylindrical exterior surface thereof to a predetermined implantation depth by bombarding the cylindrical ingot with the atomic species to form a cylindrical surface layer having a thickness that essentially corresponds to the implantation depth;
- and
- detaching the surface layer at a detachment depth that is located in the vicinity of the implantation depth to detach the layer from a remainder of the cylindrical ingot.
Dependencies are inferred from the claim text.