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US 6,855,616 B2Granted
Methods for manufacturing semiconductor devices
AssigneeDongbu Electronics Co., Ltd.
InventorYoung Seong Lee
Life of this patent
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Abstract
A method of producing a semiconductor device, wherein after a trench is formed on a field region of a semiconductor substrate, an adsorption reaction of TEOS and a decomposition/recomposition reaction of TEOS using as a catalyst oxygen atoms decomposed from O3 are independently and repeatedly performed. As disclosed, the oxide layer can be buried in the trench with a fine width without generating voids therein, increasing electrical property of the semiconductor device.
Claims7
A method for manufacturing a semiconductor device, the method comprising:
- depositing an insulating layer on a semiconductor substrate;
- forming an opening of the insulating layer exposing a field region of the semiconductor substrate;
- forming a trench in the semiconductor substrate on the exposed region in the opening;
- performing independently an adsorption reaction of TEOS and a decomposition/recomposition reaction of TEOS using O3, thus depositing an oxide layer in a thin thickness on the surface of the semiconductor substrate;
- and
- depositing repeatedly the oxide layer to bury a plurality of the oxide layer in the trench.
3 more elements
Dependencies are inferred from the claim text.