Sidewalls as semiconductor etch stop and diffusion barrier
AssigneeIntegrated Discrete Devices, LLC
InventorRichard A. Metzler
Life of this patent
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Abstract
Methods and apparatus of forming a semiconductor device using pedestals and sidewalls. The pedestals and sidewalls may provide an etch stop and/or a diffusion barrier during manufacture of a semiconductor device. Processes of forming diode connected vertical cylindrical field effect devices are disclosed to exemplify the use of the pedestals and/or sidewalls. A system for forming the pedestals and sidewalls is described.
Claims52
A method of processing for a semiconductor device, the method comprising:
- providing a wafer including a substrate;
- forming a plurality of sidewalls around a plurality of cylindrical pedestals above a surface of the substrate;
- removing the plurality of cylindrical pedestals;
- and
- vertically etching horizontal surfaces of a first material located around the plurality of sidewalls, wherein the plurality of sidewalls provide an etch stop and protect the first material under the plurality of sidewalls from being etched during the vertical etching of the first material.
A method of processing for a semiconductor device, the method comprising:
- providing a wafer including a substrate;
- forming a plurality of sidewalls around a plurality of cylindrical pedestals above a surface of the substrate;
- removing the plurality of cylindrical pedestals;
- vertically etching horizontal surfaces of a first material located around the plurality of sidewalls, wherein the plurality of sidewalls provide an etch stop and protect the first material under the plurality of sidewalls from being etched during the vertical etching of the first material;
- and
- diffusing a dopant into the first material located around the plurality of sidewalls.
A method of processing for a semiconductor device, the method comprising:
- providing a wafer including a substrate of the semiconductor device;
- forming a plurality of sidewalls around a plurality of cylindrical pedestals above a surface of the substrate;
- removing the plurality of cylindrical pedestals;
- vertically etching horizontal surfaces of a first material located around the plurality of sidewalls, wherein the plurality of sidewalls provide an etch stop and protect the first material under the plurality of sidewalls from being etched during the vertical etching of the first material;
- and
- diffusing a dopant around the plurality of sidewalls.
A method of processing for a semiconductor device, the method comprising:
- providing a wafer including a substrate of the semiconductor device, the semiconductor device being a transistor or a diode;
- forming a plurality of sidewalls around a plurality of cylindrical pedestals above a surface of the substrate;
- removing the plurality of cylindrical pedestals;
- vertically etching horizontal surfaces of a first material located around the plurality of sidewalls, wherein the plurality of sidewalls provide an etch stop and protect the first material under the plurality of sidewalls from being etched during the vertical etching of the first material;
- and
- diffusing a dopant around the plurality of sidewalls.
A method of processing for a semiconductor device, the method comprising:
- providing a wafer including a substrate of the semiconductor device, the semiconductor device being a transistor or a diode;
- forming a plurality of sidewalls around a plurality of cylindrical pedestals above a surface of the substrate;
- removing the plurality of cylindrical pedestals;
- and
- vertically etching horizontal surfaces of a first material located around the plurality of sidewalls, wherein the plurality of sidewalls provide an etch stop and protect the first material under the plurality of sidewalls from being etched during the vertical etching of the first material.
Dependencies are inferred from the claim text.