Method for manufacturing a CMOS image sensor having a capacitor's top electrode in contact with a photo-sensing element
AssigneeHynix Semiconductor Inc.
InventorsJin-Su Han, Hoon-Sang Oh
Life of this patent
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Abstract
An image sensor includes a plurality of unit pixels for sensing a light beam to generate an image data. Each of the unit pixels includes, a photoelectric element for sensing a light beam incident thereto and generating photoelectric charges, a transistor including a gate dielectric formed adjacent to the photoelectric element and a gate electrode formed on top of the gate dielectric and a capacitor structure including an insulating film formed on a portion of the photoelectric element and a bottom electrode, wherein the insulating film and the gate dielectric are made of a same material and the bottom electrode and the gate electrode are made of a same material.
Claims40
A method for manufacturing an image sensor, the method comprising:
- a) forming a photo-sensing element in a semiconductor substrate;
- b) forming a first dielectric layer on top of the semiconductor substrate;
- c) forming a first conductive layer on top of the first dielectric layer;
- d) patterning, substantially simultaneously, the first dielectric layer and the first conductive layer to form an insulating film and a bottom electrode of a capacitor structure and a gate dielectric and a gate electrode of a transfer transistor;
- e) forming successively a second dielectric layer and a second conductive layer over the semiconductor substrate;
- and
- f) removing portions of the second conductive layer and the second dielectric layer that overlie the photoelectric element and overlie the gate dielectric to form a capacitor dielectric and a top electrode of the capacitor structure;
- wherein a portion of the top electrode is in contact with the photo-sensing element.
A method for manufacturing an image sensor, the method comprising:
- forming a photo-sensing element in a semiconductor substrate;
- forming a capacitor structure on the semiconductor substrate, wherein forming the capacitor structure includes:
- forming an insulating film on a surface of the semiconductor substrate adjacent the photo-sensing element,
- forming a bottom electrode on top of the insulating film,
- forming a capacitor dielectric layer on top of the bottom electrode;
- and
- forming a top electrode on top of the capacitor dielectric layer and in contact with the photo-sensing element;
- and
- forming a transfer transistor on the semiconductor substrate.
A method for manufacturing an image sensor, the method comprising:
- forming a photo-sensing element in a semiconductor substrate;
- forming a capacitor structure on the semiconductor substrate, wherein forming the capacitor structure includes:
- forming an insulating film on a surface of the semiconductor substrate adjacent the photo-sensing element,
- forming a bottom electrode on top of the insulating film,
- forming a capacitor dielectric layer on top of the bottom electrode;
- forming a top electrode on top of the capacitor dielectric layer;
- and
- forming a conducting member on top of the top electrode and in contact with the photo-sensing element;
- and
- forming a transfer transistor on the semiconductor substrate.
A method for manufacturing an image sensor, the method comprising:
- forming a photo-sensing element in a semiconductor substrate;
- forming a first dielectric layer on top of the semiconductor substrate;
- forming a first conductive layer on top of the first dielectric layer;
- patterning, substantially simultaneously, the first dielectric layer and the first conductive layer to form an insulating film and a bottom electrode of a capacitor structure and a gate dielectric and a gate electrode of a transfer transistor;
- forming successively a second dielectric layer and a second conductive layer over the semiconductor substrate;
- removing portions of the second conductive layer and the second dielectric layer that overlie the photoelectric element and overlie the gate dielectric to form a capacitor dielectric and a top electrode of the capacitor structure;
- and
- forming a conductive member over a portion of the top electrode and a portion of the photo-sensing element;
- wherein the conductive member electrically couples the top electrode and the photo-sensing element.
Dependencies are inferred from the claim text.