Method for manufacturing semiconductor device
AssigneeHynix Semiconductor Inc.
InventorWan Gyu Lee
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a semiconductor device is disclosed, in which characteristics of the semiconductor device and an operation speed are improved. In forming sidewall spacers at both sides of a gate electrode, a semiconductor substrates is partially removed at both sides of the sidewall spacer by controlling an etch gas, and then a process for forming a silicide layer is performed, thereby increasing a distance between the silicide layer and a channel. Accordingly, it is possible to decrease a resistance material between the silicide layer and the channel region.
Claims21
A method for manufacturing a semiconductor device comprising:
- forming a barrier for isolating devices from one another on a semiconductor substrate;
- forming a gate insulating layer on the semiconductor substrate;
- forming a gate electrode on the gate insulating layer;
- forming LDD regions in the semiconductor substrate at both sides of the gate electrode;
- forming an insulating layer on an entire surface of the semiconductor substrate including the gate electrode;
- forming sidewall spacer at both sides of the gate electrode by selectively removing the insulating layer, simultaneously, etching the semiconductor substrate at a predetermined thickness;
- performing a cleaning process on the semiconductor substrate;
- forming source and drain regions on the surface of the semiconductor substrate;
- decreasing a grain size of the gate electrode, source and drain regions by performing a pre-amorphization implant (PAI) process;
- and
- forming a metal silcide layer on surfaces of the gate electrode and the source/drain regions.
Dependencies are inferred from the claim text.