Method of manufacturing a semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Setsuo Nakajima, Hidekazu Miyairi
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Abstract
After crystallization of a semiconductor film is performed by irradiating first laser light (energy density of 400 to 500 mJ/cm2) in an atmosphere containing oxygen, an oxide film formed by irradiating the first laser light is removed. It is next performed to irradiate second laser light under an atmosphere that does not contain oxygen (at a higher energy density than that of the first laser light irradiation), thus to increase the flatness of the semiconductor film.
Claims20
A method of manufacturing a semiconductor device comprising:
- a first step of forming a first semiconductor film comprising an amorphous structure on an insulating film;
- a second step of irradiating first laser light to the first semiconductor film after performing heat treatment to form a second semiconductor film comprising a crystalline structure and an oxide film on the second semiconductor film;
- a third step of removing the oxide film;
- and
- a fourth step of irradiating second laser light in an inert gas atmosphere or in a vacuum to level a surface of the second semiconductor film.
A method of manufacturing a semiconductor device comprising:
- a first step of forming a first semiconductor film comprising an amorphous structure on an insulating surface;
- a second step of adding a metallic element to the first semiconductor film;
- a third step of irradiating first laser light to the first semiconductor film after performing heat treatment to form a second semiconductor film comprising a crystalline structure and an oxide film on the second semiconductor film;
- a fourth step of removing the oxide film;
- a fifth step of irradiating second laser light in an inert gas atmosphere or in a vacuum to level a surface of the second semiconductor film;
- a sixth step of forming a barrier layer on the surface of the second semiconductor film;
- a seventh step of forming a third semiconductor film comprising an inert gas element on the barrier layer;
- an eighth step of gettering the metallic element into the third semiconductor film, thus to reduce the concentration of the metallic element in the second semiconductor film;
- and
- a ninth step of removing the third semiconductor film.
A method of manufacturing a semiconductor device according to claim to 3, wherein the third semiconductor film is formed by sputtering with semiconductor as a target in an atmosphere containing an inert gas element.
A method of manufacturing a semiconductor device, comprising:
- a first step of forming a first semiconductor film comprising an amorphous structure on an insulating surface;
- a second step of adding a metallic element to the first semiconductor film;
- a third step of irradiating first laser light to the first semiconductor film after performing heat treatment to form a second semiconductor film comprising a crystalline structure and an oxide film on the second semiconductor film;
- a fourth step of leveling a surface of the second semiconductor film;
- and
- a fifth step of gettering the metallic element to reduce the concentration of the metallic element in the second semiconductor film.
Dependencies are inferred from the claim text.