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US 6,855,583 B1Granted
Method for forming tri-gate FinFET with mesa isolation
AssigneeAdvanced Micro Devices, Inc.
InventorsZoran Krivokapic, Judy Xilin An, Bin Yu
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Abstract
A method forming a tri-gate fin field effect transistor includes forming an oxide layer over a silicon-on-insulator wafer comprising a silicon layer, and etching the silicon and oxide layers using a rectangular mask to form a mesa. The method further includes etching a portion of the mesa using a second mask to form a fin, forming a gate dielectric layer over the fin, and forming a tri-gate over the fin and the gate dielectric layer.
Claims19
A method of forming a fin field effect transistor, comprising:
- forming a mesa on a silicon-on-insulator wafer;
- forming a dummy gate with a first material in a first pattern over the mesa;
- forming a first dielectric layer around the dummy gate;
- removing the first material to create a trench shaped in the first pattern;
- forming a mask over a portion of the trench and the mesa;
- etching a portion of the mesa that is exposed within the trench to form a fin;
- forming a gate dielectric layer over the fin;
- forming a gate within the trench over the gate dielectric layer;
- and
- removing the first dielectric layer.
7 more elements
A method of forming a tri-gate fin field effect transistor, comprising:
- forming an oxide layer over a silicon-on-insulator wafer comprising a silicon layer;
- etching the silicon and oxide layers using a rectangular mask to form a mesa;
- etching a portion of the mesa using a second mask to form a fin, wherein the etching a portion of the mesa includes:
- etching a portion of the mesa in a channel region of the tri-gate fin field effect transistor;
- forming a gate dielectric layer over the fin;
- and
- forming a tri-gate over the fin and the gate dielectric layer.
4 more elements
Dependencies are inferred from the claim text.