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US 6,855,582 B1Granted
FinFET gate formation using reverse trim and oxide polish
AssigneeAdvanced Micro Devices, Inc.
InventorsSrikanteswara Dakshina-Murthy, Cyrus E. Tabery
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Abstract
A method of forming a gate electrode for a fin field effect transistor (FinFET) is provided. The method includes forming a fin on a substrate and forming an oxide layer over the fin. The method further includes forming a trench in the oxide layer, the trench crossing over the fin, and filling the trench with a material to form a gate electrode.
Claims19
A method of forming a gate electrode for a fin field effect transistor (FinFET), comprising:
- forming a fin on a substrate;
- forming an oxide layer over the fin;
- forming a trench in the oxide layer, the trench crossing over the fin;
- and
- filling the trench with a material to form a gate electrode.
2 more elements
A method of forming a gate for a fin field effect transistor (FinFET), comprising:
- forming an oxide layer over a fin;
- etching away at least a portion of the oxide layer to form a protrusion above the fin;
- forming a nitride layer over the oxide layer and the protrusion;
- polishing the nitride layer and the protrusion to expose a top surface of the protrusion;
- etching the protrusion and the oxide layer to form a trench that crosses over the fin;
- and
- filling the trench with a material to form the gate.
4 more elements
Dependencies are inferred from the claim text.