Method of producing GaN-based semiconductor laser device and semiconductor substrate used therefor

Abstract

The present invention provides a method for fabricating a GaN-based semiconductor laser device comprising the steps of forming a GaN-based semiconductor layer 102 on a substrate 101; forming, on the surface of the first GaN-based semiconductor layer, a mask layer 103 that comprises a striped pattern composed of a plurality of band-like portions 103a that are regularly arranged in the width direction and an alignment pattern formed by altering the regularity of some portion of the plurality of band-like portions 103a; depositing a second GaN-based semiconductor layer 104 on the mask layer 103 by the selective lateral growth method with starting points at portions of the first GaN-based semiconductor layer 104 that are exposed from the mask layer 103; forming a multi-layered semiconductor that comprises an n-type GaN-based semiconductor layers 105 to 107, an active layer 108, and a p-type GaN-based semiconductor layers 109 to 111 on the second GaN-based semiconductor layer 104; and forming a current injection region 112 directly above the band-like portion 103a while using the alignment pattern as a reference to position the current injection region.

Dependencies are inferred from the claim text.