Compound semiconductor laser

Abstract

A compound semiconductor laser of a III group nitride semiconductor of the present invention includes a first cladding layer 104 of a first conduction type formed on a substrate 101, an active layer 106 formed on the first cladding layer, a second cladding layer 108 of a second conduction type formed on the active layer 106, and a buried layer 110 formed on the second cladding layer 108, the buried layer having an opening portion for constricting a current in a selected region of the active layer, wherein an upper portion of the second cladding layer 108 has a ridge portion, the ridge portion residing in the opening portion of the buried layer 110, and the buried layer 110 does not substantially absorb light output from the active layer 106, and the buried layer has a refractive index which is approximately identical with that of the second cladding layer 108.

Dependencies are inferred from the claim text.