Method of manufacturing a tunnel magneto-resistance based magnetic memory device
AssigneeSony Corporation
InventorMakoto Motoyoshi
Life of this patent
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Abstract
In a method of manufacturing a magnetic memory device comprising a writing word line (first wiring) and a bit line (second wiring) three-dimensionally orthogonally intersecting therewith, with a TMR device therebetween, a first mask to be a mask shape for the TMR device is formed, the TMR device is formed by use of the first mask as a mask, thereafter a second mask to be used for forming a wiring for connecting the TMR device to a wiring on the lower side thereof is formed while causing at least a part of the second mask to overlap with the first mask so that the first mask becomes a mask at one end side of the wiring, and a connection wiring for connecting the TMR device to the wiring on the lower side thereof is formed by use of the first and second masks.
Claims2
A method of manufacturing a magnetic memory device, comprising the steps of:
- forming a first wiring;
- forming a tunnel magnetoresistance device which comprises a tunnel insulation layer sandwiched between ferromagnetic materials and electrically insulated from said first wiring;
- and
- forming a second wiring electrically connected to said tunnel magnetoresistance device;
- wherein said method comprises the steps of:
- forming a conductive layer for connecting said tunnel magnetoresistance device to a lower-layer wiring, after the formation of said first wiring and before the formation of said tunnel magnetoresistance device;
- forming a first mask to be used for forming said tunnel magnetoresistance device;
- after the formation of said magnetoresistive device, forming a second mask to be used for forming a wiring for connecting said tunnel magnetoresistance device to the lower-layer wiring, said second mask partly or entirely overlapping said first mask;
- and
- processing said conductive layer by use of said first mask and said second mask so as thereby form a connection wiring for connecting said tunnel magnetoresistance device to the lower-layer wiring.
Dependencies are inferred from the claim text.