Back to results
US 6,855,370 B2Granted
Fluoropolymer interlayer dielectric by chemical vapor deposition
AssigneeE. I. Du Pont de Nemours and Company
InventorsMichael Mocella, Andrew E. Feiring, Theodore A. Treat, Yakov Brichko, Eugene Lopata, Peter Rose
Life of this patent
Estimating the term…
Abstract
A process is disclosed for forming a fluoropolymer layer on a thin film device, comprising contacting said thin film device with a gas phase fluoromonomer, and initiating polymerization of said fluoromonomer with a free radical polymerization initiator whereby said fluoromonomer polymerizes to form said fluoropolymer layer on said thin film device.
Claims8
A process for forming a fluoropolymer layer on a thin film device, comprising:
- a.) delivering a gas phase fluoromonomer and a gas phase free radical polymerization initiator to said thin film device,
- b.) mixing said gas phase fluoromonomer and said gas phase free radical polymerization initiator to form a gas phase mixture of said fluoromonomer and said free radical polymerization initiator,
- c.) contacting said thin film device with said gas phase mixture of said fluoromonomer and said free radical polymerization initiator, and
- d.) initiating polymerization of said fluoromonomer with said free radical polymerization initiator, whereby said fluoromonomer polymerizes to form said fluoropolymer layer on said thin film device.
1 more element
Dependencies are inferred from the claim text.